IS42S32800G-7BL

The IS42S32800G-7BL is a 256 Mbit synchronous DRAM organized as 8M × 32 with a parallel memory interface. It implements a quad-bank, fully synchronous pipeline architecture and is designed for applications that require a 256 Mbit parallel SDRAM with programmable burst and latency options.

This device operates from a 3.0 V to 3.6 V supply, targets a commercial operating range of 0°C to 70°C, and is supplied in a 90-ball TF‑BGA (8 × 13) package. The part supports a 143 MHz clock option with an access time of 5.4 ns (CAS latency = 3 configuration).

Key Features

• Memory Architecture Organized as 8M × 32 (2M × 32 × 4 banks) providing 256 Mbit of volatile SDRAM capacity in a quad-bank configuration.
• Synchronous Pipeline Design Fully synchronous operation with all signals referenced to the rising edge of the clock for predictable timing and pipeline data transfer.
• Clock and Timing Supports a 143 MHz clock option with CAS latency options and an access time of 5.4 ns (CAS latency = 3).
• Burst and Sequencing Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) for flexible data transfer patterns.
• Refresh and Power Auto Refresh and Self Refresh supported; refresh count defined in datasheet with device-grade options for refresh intervals.
• Interface and Logic Levels Parallel memory interface with LVTTL signaling and support for random column address every clock cycle.
• Supply and Package Single power supply 3.0 V–3.6 V and 90-ball TF‑BGA (8 × 13) package for compact board-level integration.
• Operating Range Commercial temperature range specified as 0°C to +70°C (TA) for this part number.

Typical Applications

• Parallel SDRAM subsystems — Use as on-board DRAM where a 256 Mbit parallel SDRAM device is required for system memory expansion or buffering.
• High-throughput data buffering — Suited to designs that benefit from programmable burst lengths and banked memory access to sustain sequential data transfers.
• Embedded board-level memory — Compact 90-TF‑BGA package enables integration into space-constrained PCBs requiring a 3.3 V SDRAM solution.

Unique Advantages

• Quad-bank architecture: Reduces row-access overhead by internal bank management to improve effective throughput for interleaved operations.
• Programmable burst control: Burst length and sequence selection allow tuning of transfer patterns to match system memory access behavior.
• Flexible timing options: Programmable CAS latency (2 or 3 clocks) and documented timing parameters for the 143 MHz option enable predictable performance integration.
• Standard 3.3 V supply compatibility: Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), aligning with common legacy SDRAM power domains.
• Compact BGA footprint: 90‑ball TF‑BGA (8 × 13) package provides a small board area for designs with limited space.

Why Choose IS42S32800G-7BL?

The IS42S32800G-7BL delivers a documented 256 Mbit synchronous DRAM solution with a quad-bank pipeline architecture, programmable burst/latency options, and a 143 MHz clock configuration for systems requiring deterministic parallel SDRAM behavior. Its 3.0 V–3.6 V supply range and 90-ball TF‑BGA package make it suitable for board-level memory implementations where a compact parallel DRAM is needed.

Engineers specifying this device benefit from clear timing parameters, refresh modes, and interface definitions in the datasheet, enabling straightforward integration into designs that depend on 256 Mbit parallel SDRAM functionality within the commercial temperature range.

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