IS42S32800G-7BL-TR

The IS42S32800G-7BL-TR is a 256Mbit synchronous DRAM organized as 8M × 32 with a quad-bank architecture and pipeline design for high-speed data transfer. It is a parallel-interface SDRAM device offered in a 90-ball TF-BGA (8×13) package and is intended for commercial temperature operation (0°C to +70°C).

This device supports standard SDRAM features—programmable burst lengths and sequences, selectable CAS latencies, auto- and self-refresh—and is designed for board-level memory subsystems operating from a 3.3V supply range.

Key Features

• Memory Core 256 Mbit capacity, organized as 8M × 32 and internally configured as 2M × 32 × 4 banks for parallel SDRAM operation.
• Synchronous SDRAM Architecture Fully synchronous operation with all signals referenced to the rising edge of the clock; pipeline architecture for high-speed transfers.
• Performance -7 timing option supports a clock frequency of 143 MHz with an access time from clock of 5.4 ns; device family also offers 166 MHz and 200 MHz options.
• Programmable Burst and Latency Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh and Self-Refresh Auto Refresh (CBR) and Self Refresh supported; 4096 refresh cycles with timing options of 16 ms (A2 grade) or 64 ms (commercial/A1/industrial options as specified).
• Interface and Signaling LVTTL-compatible interface for command and control signals; random column address capability every clock cycle for rapid access patterns.
• Power Single power supply operation at 3.3V ±0.3V (documented supply range 3.0 V to 3.6 V).
• Package and Mounting 90-ball TF-BGA (8×13) package suitable for board-level mounting in compact designs.
• Operating Range Commercial temperature range listed as 0°C to +70°C (TA) for the specified commercial-grade device.

Typical Applications

• Embedded systems Used as board-level SDRAM for embedded platforms that require a 256 Mbit parallel memory with synchronous operation.
• High-speed data buffering Provides pipeline-capable buffering in digital subsystems where predictable, clock-referenced access timing is required.
• Consumer electronics Suited for commercial-temperature consumer devices needing 256Mbit SDRAM in a compact 90-TFBGA footprint.

Unique Advantages

• Selectable performance modes: Multiple timing options (200, 166, 143 MHz) and CAS latency settings allow designers to match speed and timing to system requirements.
• Flexible burst control: Programmable burst lengths and sequential/interleave burst sequencing simplify memory access patterns and performance tuning.
• Quad-bank architecture: Four internal banks support hidden row access/precharge for improved effective throughput in burst and random access scenarios.
• Standard 3.3V power: Operates from a 3.3V single supply (3.0–3.6V range), aligning with common system memory power rails.
• Compact BGA package: 90-ball TF-BGA (8×13) package reduces board footprint while providing a robust mounting option for surface-mount assemblies.
• Refresh and low-power options: Supports Auto Refresh and Self Refresh modes with documented refresh counts and timing options for different grade requirements.

Why Choose IS42S32800G-7BL-TR?

The IS42S32800G-7BL-TR delivers a straightforward 256Mbit synchronous DRAM solution in an 8M × 32 organization for designers needing predictable, clock-referenced memory performance. With programmable burst behavior, selectable CAS latency, and quad-bank architecture, it provides the timing flexibility and throughput control required for a range of commercial applications.

Packaged in a compact 90-TF BGA and specified for 3.3V systems at commercial temperature range, this ISSI device is appropriate for board-level memory subsystems where a documented SDRAM feature set and standard signaling are required.

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