IS42S32800G-6BLI

The IS42S32800G-6BLI is a 256Mbit synchronous DRAM organized as 8M × 32 with a quad-bank architecture and pipeline design for high-speed data transfer. It is designed to operate from a 3.3V power supply (3.0V–3.6V tolerance) with all signals referenced to the rising edge of the clock.

This device provides programmable burst lengths and sequences, selectable CAS latencies, and on-chip refresh options, making it suitable for parallel SDRAM memory subsystems requiring deterministic, clocked operation and flexible burst behavior.

Key Features

• Core / Architecture Quad-bank SDRAM internally organized as 2M × 32 × 4 banks with pipeline architecture to support continuous, clock-synchronous operation.
• Memory Organization 256 Mbit capacity arranged as 8M × 32 bits to support wide parallel data paths.
• Performance Clock frequency options include 200, 166, and 143 MHz; the -6 device supports 166 MHz operation with an access time from clock of 5.4 ns (CAS latency = 3).
• Programmability Programmable burst lengths (1, 2, 4, 8, full page), programmable burst sequence (sequential/interleave), and selectable CAS latency (2 or 3 clocks) for flexible timing and throughput tuning.
• Refresh and Self-Maintenance Auto Refresh (CBR) and Self Refresh supported; refresh rate options include 4K cycles/16 ms for A2 grade or 4K cycles/64 ms for Commercial, Industrial, and A1 grades as specified.
• Interface Parallel LVTTL interface with random column address capability every clock cycle and burst read/write operations including burst read/single write.
• Power Single power supply operation at 3.3V ±0.3V (documented supply range 3.0V–3.6V).
• Package & Temperature Available in a 90-ball TF-BGA (90-TFBGA, 8×13) package; documented operating temperature range includes −40°C to +85°C for industrial operation.

Unique Advantages

• High-speed synchronous operation: Pipeline architecture and clock-referenced I/O support deterministic, high-throughput transfers at up to 166 MHz for the -6 device.
• Flexible burst and timing control: Programmable burst lengths, burst sequencing, and CAS latency let designers optimize latency and bandwidth for target workloads.
• Robust refresh options: Auto and self refresh modes with selectable refresh cadence accommodate different system refresh requirements and grades.
• Wide supply tolerance: Designed for 3.3V memory systems with a documented supply range of 3.0V–3.6V to tolerate common system variations.
• Compact BGA package: 90-TFBGA (8×13) package provides a small footprint for space-constrained board layouts while supporting wide parallel data paths.
• Industrial temperature capability: Documented operation down to −40°C and up to +85°C for industrial-grade deployments.

Why Choose IS42S32800G-6BLI?

The IS42S32800G-6BLI delivers a balance of capacity, programmable performance, and board-level compactness for systems requiring 256 Mbit of parallel SDRAM with synchronous, clocked operation. Its selectable burst modes, CAS latencies, and refresh options allow designers to tune latency and throughput to application needs while operating from a standard 3.3V memory supply.

This device is suited for designs that need deterministic SDRAM behavior, flexible timing control, and industrial temperature operation, backed by a complete technical specification that documents timing, refresh, and electrical characteristics.

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