IS42S32800G-6BLI-TR

The IS42S32800G-6BLI-TR is a 256 Mbit synchronous DRAM device organized as 8M × 32 with a quad-bank architecture and pipeline data path. It is a fully synchronous memory designed for 3.3 V memory systems and supports high-speed transfers at a 166 MHz clock rate for the –6 speed grade.

This device targets designs that require parallel SDRAM storage with programmable burst operation, selectable CAS latency, and refresh management for reliable dynamic memory operation in systems operating from –40°C to 85°C.

Key Features

• Core Architecture Fully synchronous SDRAM with pipeline architecture and internal quad-bank organization (2M × 32 × 4 banks) to support continuous high-speed transfers.
• Memory Density & Organization 256 Mbit capacity organized as 8M × 32 bits, providing wide 32-bit data paths for parallel memory systems.
• Performance 166 MHz clock frequency (–6 speed grade) with programmable CAS latency options (2 or 3 clocks) and an access time from clock of 5.4 ns for the –6 timing.
• Burst and Sequence Control Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence modes (sequential or interleave) for flexible block transfers.
• Refresh and Power Management Supports Auto Refresh (CBR) and Self Refresh; refresh cycle options include 4K refresh cycles per 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grades) as documented.
• Interface & Signaling LVTTL-compatible command and address interface with parallel memory interface signals referenced to the rising edge of the clock.
• Power Single power supply operation at 3.3 V ±0.3 V (listed supply range 3.0 V to 3.6 V).
• Package & Temperature 90-ball TF-BGA (8 × 13) package; operating ambient temperature range specified as –40°C to +85°C (TA) for the listed device.

Typical Applications

• Synchronous memory subsystems — Acts as a 3.3 V SDRAM device for systems that require parallel 32-bit wide memory with programmable burst operation.
• High-speed buffering — Used where pipeline architecture and 166 MHz operation support timely data buffering and transfer between system components.
• Memory-dense module designs — Suitable for designs needing 256 Mbit density in a compact 90-TFBGA footprint for space-constrained PCBs.

Unique Advantages

• Quad-bank pipeline architecture — Enables overlapping row activation and precharge to improve effective throughput during sequential operations.
• Flexible burst control — Programmable burst lengths and sequence modes simplify integration with varying data access patterns and controller strategies.
• Selectable CAS latency — CAS latency options (2 or 3) allow designers to trade timing and throughput per system timing constraints.
• Robust refresh options — Auto Refresh and Self Refresh support and documented refresh cycle timings for multiple grade options help maintain data integrity across operating conditions.
• Industry-standard signaling and voltage — LVTTL interface and 3.3 V supply compatibility align with common memory system designs for straightforward integration.
• Compact BGA package — 90-ball TF-BGA (8×13) package offers high density in a small PCB footprint for scalable memory implementations.

Why Choose IS42S32800G-6BLI-TR?

The IS42S32800G-6BLI-TR provides a synchronous, quad-bank 256 Mbit SDRAM solution with a 32-bit data path and 166 MHz operation for systems requiring predictable, programmable burst performance and selectable CAS latency. Its 3.3 V single-supply operation, LVTTL signaling, and compact 90-TFBGA package make it suitable for designs that need a high-density parallel memory device with standard electrical interfaces.

This device is appropriate for engineers building memory subsystems and buffering solutions where timing control, refresh management, and package density are key selection criteria. The documented timing parameters and refresh options support reliable integration and long-term use in 3.3 V memory systems.

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