IS42S32800G-6BL-TR

The IS42S32800G-6BL-TR is a 256 Mbit synchronous DRAM organized as 8M × 32 with a quad-bank architecture and pipeline data transfer. It provides a parallel LVTTL interface and is designed for high-speed system memory applications that require a 3.0 V–3.6 V supply and a 90-ball thin fine-pitch BGA package.

This device supports programmable burst lengths and CAS latency options to match a range of system timing needs, with a rated clock frequency of 166 MHz and an access time of 5.4 ns for the -6 speed grade.

Key Features

• Core / Architecture Quad-bank synchronous DRAM with pipeline architecture; all signals referenced to the rising clock edge for deterministic timing.
• Memory Organization 256 Mbit capacity organized as 8M × 32 (2M × 32 × 4 banks) to support wide 32-bit parallel data paths.
• Performance -6 speed grade: 166 MHz clock frequency and 5.4 ns access time (CAS latency = 3) for high-rate burst transfers.
• Programmable Timing and Burst Programmable CAS latency (2 or 3 clocks), programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential/interleave burst sequences.
• Power Single power supply operation with VDD/VDDQ in the 3.0 V to 3.6 V range.
• Interface Parallel LVTTL interface supporting random column access every clock cycle and standard SDRAM command set (burst read/write, auto-precharge, burst termination).
• Refresh and Reliability Auto Refresh and Self Refresh supported; commercial-grade refresh cycle: 4096 cycles every 64 ms.
• Package and Temperature 90-ball TF‑BGA (8 × 13) package, commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• System Memory for Embedded Platforms Provides 32-bit parallel SDRAM capacity for embedded controllers, set-top boxes, and other devices requiring synchronous DRAM.
• Display and Multimedia Buffers Suitable for frame buffering and burst-oriented data streams where programmable burst lengths and CAS latency tuning are needed.
• Legacy Parallel SDRAM Designs Direct replacement in systems designed around 3.3 V parallel SDRAM interfaces and TF‑BGA mounting.

Unique Advantages

• Deterministic Synchronous Interface: Signals referenced to the rising clock edge simplify timing analysis and integration into synchronous memory buses.
• Flexible Burst and Latency Options: Programmable burst lengths and CAS latencies allow designers to tune performance to system access patterns.
• Wide 32-bit Data Path: 8M × 32 organization supports efficient 32-bit parallel transfers for bus-aligned applications.
• Industry-Standard Voltage Range: 3.0 V–3.6 V single-supply operation matches common 3.3 V system rails for straightforward power integration.
• Compact BGA Package: 90-TF‑BGA (8×13) package offers a small-footprint mounting option for space-constrained boards.

Why Choose IS42S32800G-6BL-TR?

The IS42S32800G-6BL-TR offers a practical balance of capacity, speed, and interface compatibility for designs that require 256 Mbit of synchronous DRAM in a 32-bit parallel configuration. Its programmable timing and burst options, combined with a 166 MHz speed grade and supported refresh modes, make it suitable for systems that demand predictable SDRAM behavior and straightforward integration on 3.3 V platforms.

This device is aimed at engineers and procurement teams implementing commercial-grade embedded and multimedia systems where compact TF‑BGA packaging, LVTTL parallel interfacing, and standard SDRAM command support are required.

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