IS42S32800G-6BI-TR

The IS42S32800G-6BI-TR is a 256Mbit synchronous DRAM (SDRAM) from Integrated Silicon Solution, Inc., organized as 8M × 32 with quad-bank architecture for pipelined, high-speed data transfer. The device implements a fully synchronous, parallel LVTTL interface and is supplied in a 90-ball TF‑BGA (8×13) package.

Engineered for 3.3V memory systems, this –6 speed grade supports 166 MHz clock operation with CAS latency options and access times suitable for embedded and industrial memory subsystems requiring deterministic, burst-capable DRAM performance. The device supports programmable burst lengths and refresh modes to match a range of system timing and power requirements.

Key Features

• Memory Core  256 Mbit SDRAM organized as 8M × 32 with quad-bank internal configuration for concurrent bank operations.
• Speed & Timing  –6 speed grade supports 166 MHz clock frequency with programmable CAS latency (2 or 3 clocks) and access time down to 5.4 ns.
• Burst & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) for flexible transfer patterns and throughput optimization.
• Refresh & Power Modes  Auto Refresh and Self Refresh supported; refresh cycles per datasheet options include 4K/16 ms (A2) or 4K/64 ms (Commercial/Industrial/A1) depending on grade.
• Interface & Signaling  Fully synchronous operation with LVTTL signaling; all inputs and outputs referenced to the rising clock edge for predictable timing.
• Power  Single power supply operation at 3.3V (specified 3.0 V to 3.6 V) for compatibility with standard 3.3V memory systems.
• Package & Temperature  90‑ball TF‑BGA (8×13) package; specified operating temperature range of –40°C to +85°C (TA) for industrial applications.

Typical Applications

• 3.3V Memory Subsystems  Board-level SDRAM for systems designed around 3.3V VDD/VDDQ memory architectures.
• Embedded and Industrial Systems  Memory for embedded controllers and industrial equipment that require operation across –40°C to +85°C.
• High-Speed Burst Transfers  Designs that benefit from programmable burst lengths and interleave/sequential burst sequencing for burst-heavy access patterns.

Unique Advantages

• Quad-Bank Architecture: Enables internal bank interleaving to hide row access/precharge latency and improve effective throughput.
• Speed-Grade Matched Timing: –6 grade supports 166 MHz operation with CAS latency options and 5.4 ns access time for tight timing budgets.
• Flexible Burst Control: Programmable burst lengths and sequences let designers optimize transfers for sequential and random access patterns.
• Robust Refresh Options: Auto and self-refresh modes with documented refresh cycle options accommodate varying retention and power profiles.
• Compact BGA Package: 90‑TFBGA (8×13) offers a compact, board-friendly form factor for space-constrained designs.
• Industrial Temperature Support: Specified –40°C to +85°C operation for reliable use in temperature-challenging environments.

Why Choose IS42S32800G-6BI-TR?

The IS42S32800G-6BI-TR delivers a balanced combination of deterministic SDRAM timing, flexible burst control, and industrial temperature capability in a compact 90‑TFBGA package. Its 8M × 32 organization and quad-bank design provide a straightforward 32-bit parallel memory interface for designers targeting 3.3V memory systems that require reliable burst and refresh behavior.

Backed by Integrated Silicon Solution, Inc.’s documented SDRAM architecture and timing specifications, this device is suited for engineers specifying board-level DRAM where predictable latency, programmable transfer modes, and industrial temperature operation matter for long-term system robustness.

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