IS42S32800D-7TLI-TR

The IS42S32800D-7TLI-TR is a 256Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc (ISSI), organized as 8M × 32 with internal quad-bank architecture (2M × 32 × 4 banks). It provides a parallel memory interface and is designed for systems that require a 3.3V class supply and synchronous, high-speed burst access.

This device targets board-level memory expansion where deterministic, clocked DRAM behavior and features such as programmable burst lengths, bank interleaving and self/auto refresh are required. It delivers support for the –7 speed grade (143 MHz) and industrial temperature operation.

Key Features

• Architecture 256Mbit SDRAM organized as 8M × 32 with four internal banks (2M × 32 × 4), enabling bank interleaving and pipelined access.
• Clock and Timing Supports the –7 speed grade (143 MHz) with programmable CAS latency (2 or 3 clocks) and an access time of 5.4 ns (CAS latency = 3).
• Burst and Access Modes Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with burst termination via stop or precharge commands.
• Refresh and Power Management Auto Refresh and Self Refresh supported; refresh count options include 4096 cycles per 16 ms (A2 grade) or per 64 ms (Commercial/Industrial/A1 grades).
• Interface Parallel SDRAM interface with LVTTL-compatible inputs and synchronous operation referenced to the rising clock edge.
• Supply and Voltage Single power supply operation in the 3.0 V to 3.6 V range (3.3 V ±0.3 V as specified in device documentation).
• Package and Temperature 86-pin TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) package; rated for operation from −40 °C to +85 °C (TA).

Typical Applications

• Board-level memory expansion — Provides 256Mbit of synchronous DRAM for systems requiring parallel SDRAM in an 86-pin TSOP‑II footprint.
• Embedded systems — Suitable for embedded designs that need a 3.3V SDRAM solution with programmable burst and bank-interleaving features.
• Industrial electronics — Operates across −40 °C to +85 °C for designs that require a stable SDRAM operating range and refresh management options.

Unique Advantages

• Quad-bank, interleaved architecture: Internal banking hides row access/precharge time and enables higher effective throughput during burst operations.
• Flexible burst control: Programmable burst lengths and sequences simplify integration with controllers that require sequential or interleaved data transfers.
• Deterministic synchronous timing: LVTTL-compatible, clock-referenced I/O with programmable CAS latency provides predictable timing for system designers.
• Robust refresh options: Auto and self-refresh modes and selectable refresh intervals (16 ms / 64 ms variants) support power management and data retention strategies.
• Industry-grade temperature range: Rated for −40 °C to +85 °C, enabling use in temperature-demanding board-level applications.
• Standard TSOP-II footprint: 86-pin TSOP-II package with 10.16 mm width for direct placement on common PCB layouts.

Why Choose IS42S32800D-7TLI-TR?

The IS42S32800D-7TLI-TR combines a 256Mbit SDRAM capacity with a synchronous, quad-bank architecture and programmable burst control to deliver predictable, high-speed parallel memory behavior for board-level designs. Its support for the –7 speed grade (143 MHz), LVTTL interface and selectable CAS latency options make it suitable for systems that require controlled timing and burst performance.

With single-supply operation in the 3.0–3.6 V range, Auto/Self Refresh capabilities and an industrial temperature rating of −40 °C to +85 °C, this device is appropriate for embedded and industrial applications that need robust memory behavior and flexible refresh management. It is manufactured by Integrated Silicon Solution Inc (ISSI).

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