IS42S32800G-7BLI

The IS42S32800G-7BLI is a 256Mbit synchronous DRAM organized as 8M × 32 with a parallel memory interface and quad-bank architecture. It implements a fully synchronous pipeline design with all signals referenced to the rising clock edge to support high-speed memory transfers in 3.3V systems.

Designed for systems that require high-throughput, programmable burst transfers and predictable access timing, this device delivers selectable burst lengths, programmable CAS latency and internal bank management to optimize read/write efficiency and refresh handling.

Key Features

• Core / Architecture Quad-bank synchronous DRAM architecture with internal bank management for hiding row access and precharge operations.
• Memory Organization 256Mbit capacity configured as 8M × 32 (2M × 32 × 4 banks) to provide a 32-bit wide data path.
• Performance Supports a clock frequency of 143 MHz for the -7 option with CAS access times down to 5.4 ns (CAS latency = 3) and access time from clock of 5.4 ns.
• Burst and Latency Options Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks) to match system timing requirements.
• Refresh and Power Management Auto Refresh (CBR) and Self Refresh support with refresh cycle counts specified in the datasheet to maintain data integrity.
• Power Supply Single-supply operation at 3.0 V to 3.6 V (nominal 3.3 V ±0.3 V).
• Interface LVTTL-level inputs with a parallel memory interface enabling random column address every clock cycle and burst read/write modes.
• Package & Temperature 90-ball TF-BGA (8 × 13) package and operating temperature range of −40°C to +85°C (TA) as specified for this device variant.

Typical Applications

• Parallel memory subsystems Acts as a 256Mbit parallel SDRAM for systems that require a 32-bit wide memory interface and predictable synchronous timing.
• High-speed data buffering Programmable burst lengths and 143 MHz operation enable efficient burst read/write buffering where sustained throughput and low-latency access are needed.
• Systems requiring wide data paths The 8M × 32 organization and quad-bank design support wide, interleaved access patterns for data-intensive designs.

Unique Advantages

• High-speed synchronous operation: 143 MHz clock capability (−7 option) and CAS timings specified for low-latency access.
• Flexible burst control: Programmable burst lengths and sequence modes allow tuning for sequential or interleaved transfers to match system requirements.
• Quad-bank architecture: Internal bank management improves throughput by enabling bank interleaving and reducing row/precharge overhead.
• Standard TF-BGA footprint: 90-ball TF-BGA (8 × 13) package provides a compact form factor for board-level integration.
• Wide supply and temperature range: Operates from 3.0 V to 3.6 V and across −40°C to +85°C (TA) to suit a range of 3.3V memory system environments.
• Detailed timing documentation: Device timing parameters and refresh behaviors are provided in the ISSI specification to support system timing and validation efforts.

Why Choose IS42S32800G-7BLI?

The IS42S32800G-7BLI combines a 256Mbit density with a 32-bit wide parallel interface and synchronous, quad-bank architecture to deliver predictable, programmable memory performance in 3.3V systems. Its combination of selectable burst modes, CAS latency options and specified timing parameters makes it suitable for designs that need deterministic memory timing and efficient burst transfers.

Engineers specifying this device will benefit from documented timing and refresh behavior, a compact 90-TF-BGA package, and electrical characteristics aligned with common 3.3V memory systems, making it appropriate for designs requiring robust synchronous DRAM integration.

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