IS42S32800J-6BI

IC DRAM 256MBIT PAR 90TFBGA
Part Description

IC DRAM 256MBIT PAR 90TFBGA

Quantity 1,117 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of IS42S32800J-6BI – 256 Mbit SDRAM, Parallel Interface, 90‑TFBGA

The IS42S32800J-6BI is a 256 Mbit synchronous DRAM (SDRAM) device organized as 8M × 32 with a parallel memory interface. It offers a 166 MHz clock-frequency operation and a 5.4 ns access time in a 90‑TFBGA (8×13) package.

Designed for systems that require mid-density parallel DRAM with standard 3.0–3.6 V supply and an extended operating range of −40 °C to 85 °C, this device targets applications where compact packaging, defined timing, and SDRAM architecture are required.

Key Features

  • Memory Core  Volatile SDRAM DRAM organized as 8M × 32 delivering a total capacity of 256 Mbit.
  • Performance  166 MHz clock frequency with a specified 5.4 ns access time for synchronous memory operation.
  • Interface  Parallel memory interface compatible with standard SDRAM signaling and timing.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Package  90‑TFBGA package (8×13) providing a compact surface-mount form factor.
  • Operating Temperature  Specified operating ambient range of −40 °C to 85 °C (TA).

Typical Applications

  • Embedded systems  Use as parallel SDRAM memory where a 256 Mbit density and 166 MHz synchronous operation are required for system working memory and buffering.
  • Networking and communications equipment  Suits designs needing parallel SDRAM for data buffering and temporary storage within the specified temperature and voltage ranges.
  • Consumer and industrial electronics  Applicable where a compact 90‑TFBGA packaged SDRAM device with mid-level capacity and standard power rails is needed.

Unique Advantages

  • Mid-level capacity in a compact package: 256 Mbit in a 90‑TFBGA (8×13) footprint balances board space and memory density.
  • Synchronous performance: 166 MHz clock and 5.4 ns access time provide deterministic timing for SDRAM-based designs.
  • Standard supply voltage: 3.0–3.6 V operation aligns with common system power rails to simplify power-domain design.
  • Wide operating temperature: −40 °C to 85 °C ambient rating supports use across commercial and many industrial environments.
  • Parallel interface architecture: 8M × 32 organization enables straightforward integration into parallel memory buses.

Why Choose IS42S32800J-6BI?

The IS42S32800J-6BI positions itself as a practical SDRAM option for designs requiring 256 Mbit of parallel DRAM with defined synchronous timing, a 166 MHz clock, and a compact 90‑TFBGA package. Its standard 3.0–3.6 V supply and −40 °C to 85 °C operating range make it suited to a variety of electronic systems that need reliable mid-density volatile memory.

This device is appropriate for engineers specifying parallel SDRAM based on clear electrical and timing characteristics, compact package requirements, and mid-range capacity needs.

Request a quote or contact sales to discuss availability, pricing, and lead times for the IS42S32800J-6BI.

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