IS42S32800J-6BI
| Part Description |
IC DRAM 256MBIT PAR 90TFBGA |
|---|---|
| Quantity | 1,117 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of IS42S32800J-6BI – 256 Mbit SDRAM, Parallel Interface, 90‑TFBGA
The IS42S32800J-6BI is a 256 Mbit synchronous DRAM (SDRAM) device organized as 8M × 32 with a parallel memory interface. It offers a 166 MHz clock-frequency operation and a 5.4 ns access time in a 90‑TFBGA (8×13) package.
Designed for systems that require mid-density parallel DRAM with standard 3.0–3.6 V supply and an extended operating range of −40 °C to 85 °C, this device targets applications where compact packaging, defined timing, and SDRAM architecture are required.
Key Features
- Memory Core Volatile SDRAM DRAM organized as 8M × 32 delivering a total capacity of 256 Mbit.
- Performance 166 MHz clock frequency with a specified 5.4 ns access time for synchronous memory operation.
- Interface Parallel memory interface compatible with standard SDRAM signaling and timing.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package 90‑TFBGA package (8×13) providing a compact surface-mount form factor.
- Operating Temperature Specified operating ambient range of −40 °C to 85 °C (TA).
Typical Applications
- Embedded systems Use as parallel SDRAM memory where a 256 Mbit density and 166 MHz synchronous operation are required for system working memory and buffering.
- Networking and communications equipment Suits designs needing parallel SDRAM for data buffering and temporary storage within the specified temperature and voltage ranges.
- Consumer and industrial electronics Applicable where a compact 90‑TFBGA packaged SDRAM device with mid-level capacity and standard power rails is needed.
Unique Advantages
- Mid-level capacity in a compact package: 256 Mbit in a 90‑TFBGA (8×13) footprint balances board space and memory density.
- Synchronous performance: 166 MHz clock and 5.4 ns access time provide deterministic timing for SDRAM-based designs.
- Standard supply voltage: 3.0–3.6 V operation aligns with common system power rails to simplify power-domain design.
- Wide operating temperature: −40 °C to 85 °C ambient rating supports use across commercial and many industrial environments.
- Parallel interface architecture: 8M × 32 organization enables straightforward integration into parallel memory buses.
Why Choose IS42S32800J-6BI?
The IS42S32800J-6BI positions itself as a practical SDRAM option for designs requiring 256 Mbit of parallel DRAM with defined synchronous timing, a 166 MHz clock, and a compact 90‑TFBGA package. Its standard 3.0–3.6 V supply and −40 °C to 85 °C operating range make it suited to a variety of electronic systems that need reliable mid-density volatile memory.
This device is appropriate for engineers specifying parallel SDRAM based on clear electrical and timing characteristics, compact package requirements, and mid-range capacity needs.
Request a quote or contact sales to discuss availability, pricing, and lead times for the IS42S32800J-6BI.