IS42S32800G-7BLI-TR

The IS42S32800G-7BLI-TR is a 256Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with a parallel LVTTL interface and pipeline architecture for high-speed data transfer. This device is a fully synchronous, quad-bank DRAM designed for systems requiring a 3.3V-class supply and deterministic clocked operation.

Configured for a clock frequency of 143 MHz (‑7 speed grade) with programmable CAS latency and burst options, the device supports common SDRAM functions including auto-refresh and self-refresh to maintain data integrity.

Key Features

• Core / Memory Organization 256Mbit capacity organized as 8M × 32 and internally divided into 4 banks to support concurrent row access and hidden precharge.
• Performance 143 MHz clock frequency for the -7 speed grade; programmable CAS latency (2 or 3 clocks) and access times down to 5.4 ns for CL=3.
• Interface Fully synchronous LVTTL parallel interface with support for programmable burst lengths (1, 2, 4, 8, full page) and sequential/interleave burst sequences.
• Power Single power supply operation at 3.0 V to 3.6 V (3.3 V nominal) suitable for standard 3.3V memory systems.
• Refresh and Reliability Auto Refresh (CBR) and Self Refresh supported; refresh rate options include 4K cycles per 64 ms (commercial/industrial) and A2 grade 4K per 16 ms as specified.
• Package & Temperature Supplied in a 90-ball TFBGA (8 × 13) package; operating temperature range shown in product data is −40 °C to +85 °C (TA).

Typical Applications

• Parallel SDRAM memory expansion — Use where a 256Mbit synchronous parallel DRAM is required for system memory buffering and temporary storage.
• Clocked high-speed data paths — Suitable for designs relying on a synchronous LVTTL interface with a 143 MHz clock domain.
• Temperature-constrained systems — Applicable to designs that require operation within −40 °C to +85 °C ambient conditions.

Unique Advantages

• High throughput at the -7 speed grade: Rated for 143 MHz operation with CAS latency options that enable low access times for time-critical read operations.
• Flexible burst control: Programmable burst lengths and sequence modes (sequential/interleave) provide flexibility for varied access patterns.
• Quad-bank architecture: Internal bank structure helps hide row access/precharge times to improve effective throughput.
• Synchronous LVTTL interface: All signals referenced to the rising clock edge for predictable timing and integration into clocked memory subsystems.
• Standard 90-TFBGA footprint: High-density package (90-ball, 8×13) for compact board-level integration.
• Wide supply tolerance: Operates across a 3.0 V–3.6 V supply range to accommodate typical 3.3V memory power rails.

Why Choose IC DRAM 256MBIT PAR 90TFBGA?

The IS42S32800G-7BLI-TR provides a straightforward 256Mbit SDRAM solution for designs that require a synchronous parallel memory with programmable latency and burst behavior. Its 8M × 32 organization, quad-bank architecture, and 90-ball TFBGA package allow compact integration into systems with 3.3V-class power rails and ambient operating ranges down to −40 °C.

This device is appropriate for engineers seeking a proven synchronous DRAM building block with predictable clocked behavior, selectable timing modes, and standard refresh mechanisms. Its specification set supports integration into systems where deterministic, clock-referenced memory operation is required.

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