IS42S32800D-7BL

The IS42S32800D-7BL is a 256Mbit synchronous DRAM organized as 8M × 32 with a quad‑bank architecture and fully synchronous LVTTL interface. It implements pipeline operation and programmable burst modes to support high‑rate, burstable data transfers.

Designed for systems requiring parallel SDRAM memory, the device operates from a single 3.3V supply (3.0–3.6V) and is offered in a 90‑TFBGA (8×13) package with a commercial operating range of 0°C to 70°C. Key timing options include CAS latency programmable to 2 or 3 clocks and a maximum clock frequency of 143 MHz for the –7 speed grade.

Key Features

• Memory Architecture  The device is organized as 8M × 32 (2M × 32 × 4 banks) providing 256 Mbit of volatile SDRAM storage in a quad‑bank configuration.
• Synchronous SDRAM Core  Fully synchronous operation with all signals referenced to the rising edge of the clock and LVTTL‑compatible I/O.
• Performance & Timing  Supports a clock frequency up to 143 MHz (–7), programmable CAS latency of 2 or 3 clocks, and an access time from clock of 5.4 ns (CAS‑3, –7).
• Burst and Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) with random column address every clock cycle and burst termination options.
• Refresh and Power Management  Auto Refresh and Self Refresh modes; refresh density options include 4096 refresh cycles per 16 ms (A2 grade) or per 64 ms (commercial/A1 grades).
• Supply & Package  Single power supply 3.3V ±0.3V (3.0–3.6V) in a 90‑ball TFBGA (8×13) package for compact board integration.
• Operating Range  Commercial temperature grade specified from 0°C to 70°C (TA).

Typical Applications

• High‑speed system memory  Used as synchronous parallel memory where burst access and programmable CAS latency enable predictable timing for embedded platforms.
• Data buffering and burst storage  Suited for applications requiring burst read/write operations and automatic column‑address generation.
• Memory expansion in compact systems  The 90‑TFBGA package supports high‑density board layouts where a small footprint and 32‑bit bus organization are required.

Unique Advantages

• Quad‑bank organization: Enables internal bank interleaving to hide row access and precharge times, improving sustained burst throughput.
• Programmable timing and burst modes: CAS latency and burst length/sequence programmability let designers tune latency and transfer patterns to match system timing.
• Integrated refresh options: Auto Refresh and Self Refresh modes with selectable refresh density accommodate different system power and retention requirements.
• Compact BGA package: 90‑TFBGA (8×13) reduces PCB area while providing a full 32‑bit data path for parallel memory implementations.
• Standard 3.3V supply: Single 3.3V power rail (3.0–3.6V) simplifies power design for systems already using 3.3V logic domains.

Why Choose IC DRAM 256MBIT PAR 90TFBGA?

The IS42S32800D-7BL provides a verified synchronous DRAM solution with configurable latency and burst behavior, a quad‑bank architecture for improved throughput, and integrated refresh modes for robust operation. Its 256Mbit capacity and 32‑bit data path make it suitable for designs that require predictable, high‑rate parallel memory access in a compact 90‑TFBGA footprint.

This device is well suited to engineers seeking a commercial‑grade SDRAM option that combines timing flexibility, standard 3.3V operation, and programmable burst/refresh features to match a range of embedded and system memory requirements.

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