IS42S32800D-75EBLI

The IS42S32800D-75EBLI is a 256 Mbit synchronous DRAM organized as 8M × 32 with an internal quad-bank architecture. It implements a pipelined, fully synchronous interface with LVTTL signaling and a parallel memory interface for high-rate burst transfers.

Designed for systems requiring 3.3 V nominal operation (3.0–3.6 V range) and deterministic timing, this device supports up to 133 MHz clocking with 5.5 ns access time (CL=2 variant) and an operating temperature range of −40 °C to +85 °C.

Key Features

• Memory Core  256 Mbit density organized as 8M × 32 (2M × 32 × 4 banks), providing quad-bank operation for interleaved accesses and improved throughput.
• Performance & Timing  Supports clocking to 133 MHz with an access time of 5.5 ns (CL=2, -75E variant). Programmable CAS latency (2 or 3 clocks) enables timing flexibility for system tuning.
• Burst & Sequence Control  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave) with burst termination options for efficient block transfers.
• Refresh & Power Modes  Auto Refresh and Self Refresh supported; refresh requirements include 4096 cycles within specified intervals per grade. Includes power-down mode for reduced standby power.
• Supply & Interface  Single power supply operation at 3.3 V ±0.3 V (3.0–3.6 V). LVTTL-compatible inputs and fully synchronous signaling referenced to the rising clock edge.
• Package & Temperature Range  90-ball TF-BGA (8 × 13) package with an ambient operating range of −40 °C to +85 °C (TA).

Typical Applications

• High-speed memory subsystems  Use as a parallel SDRAM store where 256 Mbit density and synchronous burst transfers at up to 133 MHz are required.
• Embedded systems with deterministic timing  Suitable for designs that require registered, edge-referenced signals and programmable CAS latency for timing optimization.
• Systems requiring compact BGA packaging  The 90-TFBGA (8×13) package supports compact board layouts while providing the parallel SDRAM interface.

Unique Advantages

• Deterministic synchronous operation: All I/O referenced to the rising clock edge and LVTTL compatibility simplify integration into synchronous memory subsystems.
• Flexible burst control: Programmable burst lengths and sequence modes enable efficient block transfers and adaptable throughput across application profiles.
• Quad-bank architecture: Four internal banks help hide row access and precharge latency, improving effective bandwidth for interleaved transactions.
• Wide supply tolerance: 3.0–3.6 V operating range (3.3 V nominal) accommodates common 3.3 V system rails.
• Industrial temperature capability: −40 °C to +85 °C ambient rating supports operation in a broad range of environments.

Why Choose IS42S32800D-75EBLI?

The IS42S32800D-75EBLI combines a 256 Mbit density with a fully synchronous, programmable SDRAM architecture to deliver predictable timing and efficient burst performance. Its quad-bank organization and flexible burst/latency options make it well suited for systems that need parallel SDRAM bandwidth in a compact BGA package.

This device is appropriate for design teams needing a 3.3 V SDRAM solution with selectable timing, auto/self-refresh capabilities, and an industrial temperature range—providing a balance of performance, integration, and reliability for memory subsystems.

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