IS42S32800D-75EBI-TR

The IS42S32800D-75EBI-TR is a 256Mbit synchronous DRAM (SDRAM) device organized as 8M × 32 with a parallel memory interface and quad-bank architecture. It implements fully synchronous, pipeline operation with LVTTL-compatible I/O and is designed for high-speed burst transfers and memory subsystems.

This device is suited to embedded and industrial memory applications that require predictable synchronous timing, programmable burst control, and operation across an extended temperature range.

Key Features

• Memory Core 256Mbit SDRAM organized as 8M × 32 (2M × 32 × 4 banks) providing a 32-bit data path and internal bank architecture for hiding row access/precharge.
• Synchronous Performance Fully synchronous operation with inputs/outputs referenced to the rising clock edge; clock frequency support for the -75E option up to 133 MHz and access time down to 5.5 ns (CAS latency = 2).
• Programmable Burst and Latency Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) with selectable CAS latency (2 or 3 clocks) for flexible memory timing.
• Refresh and Power Modes Auto Refresh and Self Refresh supported; refresh rates include 4,096 refresh cycles per 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade).
• Power Single power supply: nominal 3.3 V (3.3 V ±0.3 V), operating range specified as 3.0–3.6 V.
• Package and Temperature 90-ball TF‑BGA (8 × 13) package; operating temperature range −40 °C to +85 °C (TA) for industrial operation.
• Interface LVTTL-compatible I/O with parallel memory interface and support for burst read/write and burst read/single write operations, including burst termination commands.

Typical Applications

• Embedded memory subsystems Use as main or buffer SDRAM for embedded controllers and processors requiring synchronous burst access and predictable timing.
• Industrial equipment Suitable for industrial designs that need operation across −40 °C to +85 °C and reliable refresh/power-down behavior.
• High-speed buffer memory Employed where programmable burst lengths, interleaving between banks, and low access times (5.5 ns for CL=2) improve sustained data throughput.

Unique Advantages

• Quad‑bank architecture: Four internal banks allow interleaving to hide precharge time and enable random column address changes during burst access.
• Flexible timing control: Selectable CAS latency (2 or 3) and programmable burst sequences provide designers with tuning options for latency versus throughput.
• Robust refresh options: Supports Auto Refresh and Self Refresh with defined refresh cycle options (4,096 cycles per 16 ms or 64 ms depending on grade) for data retention management.
• Industry-grade temperature range: −40 °C to +85 °C operating range supports deployment in temperature-demanding environments.
• Compact BGA package: 90‑TFBGA (8 × 13) footprint enables high-density board integration for space-constrained applications.
• Standard 3.3 V supply: Operates from a single 3.3 V supply (3.0–3.6 V), simplifying power rail requirements in system designs.

Why Choose IS42S32800D-75EBI-TR?

The IS42S32800D-75EBI-TR delivers a synchronous, low-latency 256Mbit memory option with programmable bursts, selectable CAS latency, and quad-bank operation—features that simplify achieving high sustained throughput in embedded and industrial designs. Its industry temperature range and compact 90‑TFBGA package make it practical for space- and temperature-constrained memory subsystems.

This device is appropriate for engineers specifying reliable SDRAM where deterministic synchronous timing, flexible burst behavior, and standard 3.3 V operation are required. The documented refresh modes, self-refresh capability, and LVTTL-compatible interface provide the predictable behavior needed for long-term system operation.

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