IS42S32800D-75EBL

The IS42S32800D-75EBL is a 256Mbit synchronous DRAM organized as 8M × 32 with an internal quad-bank architecture. It provides parallel SDRAM operation with programmable burst modes and LVTTL-compatible signaling for synchronous high-speed data transfer.

Designed for systems requiring 256Mbit parallel SDRAM in a compact 90-TFBGA (8×13) package, the device supports a 3.0–3.6V supply range and commercial operating temperature of 0°C to 70°C.

Key Features

• Core / Memory Organization 256Mbit SDRAM organized as 8M × 32 (2M × 32 × 4 banks) to support quad-bank operation and interleaved access.
• Performance Supports a clock frequency of 133 MHz with an access time of 5.5 ns (specified for the -75E grade); programmable CAS latency of 2 or 3 clocks.
• Burst Control Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave) for flexible data transfers.
• Refresh and Power Management Auto Refresh and Self Refresh modes with refresh rate options: 4096 cycles per 16 ms (A2 grade) or 64 ms for Commercial/Industrial/A1 grades; includes power-down capability.
• Interface Fully synchronous operation with all signals referenced to the rising clock edge; LVTTL-compatible inputs/outputs and parallel memory interface.
• Timing Random column address every clock cycle, burst read/write and burst read/single write capabilities, and burst termination via burst stop and precharge commands.
• Power Single power supply operation at 3.3V ±0.3V (3.0–3.6V specified).
• Package & Temperature 90-ball TF-BGA (90-TFBGA, 8×13) package and commercial temperature range of 0°C to +70°C (TA) as specified for this part number.

Typical Applications

• Parallel SDRAM memory expansion — Use where a 256Mbit synchronous DRAM with parallel LVTTL interface is required for system memory or buffering.
• High-speed burst buffering — Applications that leverage programmable burst lengths and interleaved bank operation to maintain continuous data streams.
• Systems requiring self-refresh — Designs that benefit from Auto Refresh and Self Refresh modes to manage periodic refresh cycles and power-saving states.

Unique Advantages

• Quad-bank architecture: Internal 4-bank configuration enables bank interleaving to hide row access/precharge latency and improve throughput.
• Flexible burst operation: Programmable burst lengths and sequence options allow tuning of data transfer patterns to match system needs.
• Commercial temperature rating: Specified 0°C to +70°C operating range for use in standard commercial environments.
• LVTTL synchronous interface: All signals registered on the positive clock edge for predictable, clocked operation in synchronous designs.
• Compact board footprint: 90-TFBGA (8×13) package provides a small surface-mount form factor for space-constrained PCBs.

Why Choose IS42S32800D-75EBL?

The IS42S32800D-75EBL delivers a straightforward, specification-driven solution for designs needing 256Mbit parallel synchronous DRAM with programmable burst control, self-refresh capability, and LVTTL signaling. Its 3.0–3.6V supply range and 90-TFBGA package make it suitable for compact, commercial-temperature systems that require predictable synchronous memory behavior.

This device is well suited to engineers and procurement teams seeking a documented 8M × 32 SDRAM offering clear timing options (including 133 MHz / 5.5 ns operation for the -75E grade), refresh modes, and burst configuration flexibility for system memory and buffering tasks.

If you would like pricing or availability information or to request a formal quote for IS42S32800D-75EBL, please submit a quote request or contact sales for further assistance.