IS42S32800D-75EBLI-TR

The IS42S32800D-75EBLI-TR is a 256Mbit synchronous DRAM organized as 8M × 32 (configured internally as 2M × 32 × 4 banks) in a 90‑ball TF‑BGA package. It uses a fully synchronous, pipelined architecture with LVTTL signaling and a parallel memory interface for high‑speed burst transfers in 3.3 V memory systems.

Designed for systems requiring compact, high‑throughput volatile memory, this device delivers programmable burst operation and bank interleaving to improve effective data rate while supporting industry standard refresh and power‑down modes.

Key Features

• Memory Architecture  256 Mbit SDRAM organized as 8M × 32 (2M × 32 × 4 banks) to support quad‑bank operation and internal bank interleaving.
• Performance  Clock frequency up to 133 MHz for the -75E option with access time as low as 5.5 ns (CAS‑latency = 2) and programmable CAS latency options (2 and 3 clocks).
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible block transfers.
• Refresh and Power Modes  Auto Refresh, Self Refresh and power‑down modes supported; refresh cycles: 4096 cycles every 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grade).
• Interface and I/O  Fully synchronous operation with all signals referenced to the rising edge of CLK and LVTTL compatible inputs/outputs for standard system integration.
• Supply and Timing  Single supply operation at 3.3 V ±0.3 V (3.0–3.6 V) with timing optimized for synchronous operation and random column address capability every clock cycle during burst access.
• Package and Temperature  90‑TFBGA (8 × 13) package with an operating temperature range of −40 °C to +85 °C (TA) for industrial temperature applications.

Typical Applications

• System Memory (3.3 V synchronous systems)  Use as main volatile memory in designs requiring a 256 Mbit synchronous DRAM with burst capability and bank interleaving.
• High‑Throughput Buffering  Suitable for buffering and burst data transfers where programmable burst lengths and rapid CAS access times improve throughput.
• Embedded and Industrial Electronics  Applicable in industrial temperature range systems that require reliable 3.3 V SDRAM in a compact 90‑TFBGA footprint.

Unique Advantages

• Quad‑Bank Organization:  Internal 4‑bank configuration enables bank interleaving to reduce precharge latency and improve steady‑state burst throughput.
• Programmable Burst Flexibility:  Selectable burst lengths and sequences allow tuning of transfers to match system access patterns and reduce control complexity.
• Synchronous LVTTL Interface:  All I/O referenced to CLK simplifies timing design and integrates with standard LVTTL memory controllers.
• Industrial Temperature Support:  Rated for −40 °C to +85 °C to support a wide range of temperature environments.
• Compact BGA Package:  90‑TFBGA (8×13) reduces board area while delivering a 256 Mbit memory solution for space‑constrained designs.
• Standard 3.3 V Supply:  Operates at 3.3 V ±0.3 V (3.0–3.6 V), matching common memory system power rails for straightforward integration.

Why Choose IS42S32800D-75EBLI-TR?

The IS42S32800D-75EBLI-TR combines a pipelined, fully synchronous SDRAM architecture with programmable burst and latency options to provide a flexible 256 Mbit memory solution for 3.3 V systems. Its quad‑bank organization, LVTTL interface, and compact 90‑TFBGA package make it suitable for designs that require high‑speed burst transfers in a small footprint.

This device is well suited to engineers and procurement teams building systems that need deterministic synchronous timing, selectable burst behavior, and industrial temperature operation, offering a balance of performance and integration for long‑lifecycle deployments.

Request a quote or submit an inquiry to the sales team for pricing and availability of the IS42S32800D-75EBLI-TR.