IS42S32800D-6TL-TR

The IS42S32800D-6TL-TR is a 256Mbit synchronous DRAM device organized as 8M × 32 with a quad-bank architecture and pipeline design. It operates from a 3.3V supply (3.0V–3.6V) and uses fully synchronous operation with all signals referenced to the rising edge of the clock.

Designed for systems that require high-speed, burst-capable parallel memory, this device provides programmable burst length and sequence, LVTTL-compatible I/O, and built-in refresh and low-power modes for reliable data retention and efficient system integration.

Key Features

• Memory Organization  256Mbit SDRAM organized as 8M × 32 (2M × 32 × 4 banks) to support wide data paths and bank interleaving.
• Performance  Clock frequency up to 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3) to support high-speed burst transfers.
• Programmable Burst & Latency  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) plus selectable CAS latency (2 or 3 clocks) for flexible timing control.
• Refresh & Power Modes  Auto Refresh (CBR), Self Refresh and power-down capability; refresh options include 4096 refresh cycles per 16 ms (A2 grade) or per 64 ms (commercial/other grades), as specified.
• Interface & Logic Levels  LVTTL-compatible interface with all inputs and outputs referenced to the positive clock edge for deterministic synchronous operation.
• Supply Voltage  Single power supply operation at 3.3V ±0.3V (listed supply range 3.0V–3.6V).
• Package & Temperature  Available in an 86-pin TSOP-II package (86-TFSOP, 10.16 mm width) and specified commercial operating temperature range of 0°C to +70°C (TA).

Typical Applications

• System Memory  Used as parallel SDRAM in systems that require 256Mbit synchronous memory with 3.3V supply and up to 166 MHz operation.
• High-Speed Data Buffering  Suitable for buffering and burst transfers where programmable burst lengths and bank interleaving reduce latency during sustained data movement.
• Embedded and Industrial Equipment  Applicable where a commercial temperature-range, 86-pin TSOP-II package and LVTTL interface are required for board-level integration.

Unique Advantages

• High transfer capability: 166 MHz clock support and 5.4 ns access time (CL=3) enable fast synchronous data movement for performance-sensitive designs.
• Flexible burst operation: Programmable burst length and sequence plus random column addressing every clock cycle support diverse memory access patterns.
• Selectable latency: CAS latency options of 2 or 3 clocks provide designers with timing trade-offs between throughput and latency.
• Integrated refresh and low-power modes: Auto Refresh, Self Refresh and power-down modes help simplify system refresh management and reduce standby power requirements.
• Board-ready package: 86-pin TSOP-II package (10.16 mm width) provides a compact, mountable footprint for PCB-level integration.

Why Choose IC DRAM 256MBIT PAR 86TSOP II?

The IS42S32800D-6TL-TR delivers a balanced combination of synchronous performance, flexible burst control, and board-friendly packaging for designs that require 256Mbit parallel SDRAM at 3.3V. Its fully synchronous interface, selectable CAS latency, and bank-interleaving architecture make it suitable for applications needing predictable timing and sustained data throughput.

This device is well suited to engineers and procurement teams specifying commercial-temperature SDRAM in an 86-pin TSOP-II package who require programmable burst modes, refresh management, and LVTTL signaling for system-level integration and reliable operation.

Request a quote or submit a pricing/availability inquiry to receive lead-time and ordering information for IS42S32800D-6TL-TR.