| N/A | | IS42S32400J-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,189 | |
| N/A | | IS42S32400J-6TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 666 | |
| N/A | | IS42S32400J-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 515 | |
 | | IS42S32400J-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 953 | |
| N/A | | IS42S32400J-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,146 | |
| N/A | | IS42S32400J-7BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,242 | |
| N/A | | IS42S32400J-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,174 | |
 | | IS42S32400J-7BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 879 | |
| N/A | | IS42S32400J-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,060 | |
 | | IS42S32400J-7TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,161 | |
| N/A | | IS42S32400J-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,204 | |
 | | IS42S32400J-7TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 634 | |
| N/A | | IS42S32400J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 383 | |
 | | IS42S32800B-6B | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 821 | |
 | | IS42S32800B-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 935 | |
 | | IS42S32800B-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 925 | |
 | | IS42S32800B-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 408 | |
 | | IS42S32800B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,814 | |
 | | IS42S32800B-6T | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,009 | |
 | | IS42S32800B-6T-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,046 | |