 | N/A | IS42S16400N-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,487 | |
 | N/A | IS42S16400N-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,376 | |
 | N/A | IS42S16400N-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 570 | |
 | N/A | IS42S16400N-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,068 | |
 | N/A | IS42S16400N-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 606 | |
 | N/A | IS42S16400N-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,649 | |
 | | IS42S16800D-6T | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 696 | |
 | | IS42S16800D-6T-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 585 | |
 | | IS42S16800D-75EBL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 401 | |
 | | IS42S16800D-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 89 | |
 | | IS42S16800D-75EBLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,016 | |
 | | IS42S16800D-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,226 | |
 | | IS42S16800D-75ETL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 248 | |
 | | IS42S16800D-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 272 | |
 | | IS42S16800D-75ETLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 816 | |
 | | IS42S16800D-75ETLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 791 | |
 | | IS42S16800D-7B | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | DRAM Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 959 | |
 | | IS42S16800E-6BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 132 | |
 | | IS42S16800E-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 40 | |
 | | IS42S16800E-6BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 858 | |