IS42S32400J-6TL
| Part Description |
IC DRAM 128MBIT PAR 86TSOP II |
|---|---|
| Quantity | 1,089 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S32400J-6TL – IC DRAM 128MBIT PAR 86TSOP II
The IS42S32400J-6TL from ISSI is a 128 Mbit volatile SDRAM organized as 4M × 32 with a LVTTL memory interface. It is supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package and operates from a 3.0 V to 3.6 V supply.
Designed for applications requiring external DRAM, the device offers a 166 MHz clock frequency and a 5.4 ns access time in a compact TSOP II footprint suitable for space-constrained board designs.
Key Features
- Memory Type Volatile SDRAM (DRAM format) for external system memory.
- Capacity & Organization 128 Mbit total capacity organized as 4M × 32.
- Performance 166 MHz clock frequency with a 5.4 ns access time for fast memory accesses.
- Interface LVTTL memory interface for logic-level connectivity.
- Power Voltage supply range of 3.0 V to 3.6 V.
- Package 86-TSOP II / 86-TFSOP (0.400", 10.16 mm width) surface-mount package.
- Operating Temperature Commercial ambient range 0°C to 70°C (TA).
- Mounting Type Volatile memory device (DRAM).
Typical Applications
- External DRAM for digital systems Provides 128 Mbit SDRAM storage using a 4M × 32 organization and LVTTL interface for designs that require external volatile memory.
- Compact board-level memory TSOP II package (86 pins, 10.16 mm width) suits space-constrained printed circuit board layouts.
- 3.3 V logic systems Operates from a 3.0 V to 3.6 V supply, compatible with standard 3.3 V system rails.
Unique Advantages
- High-speed operation: 166 MHz clock frequency and 5.4 ns access time enable faster memory transactions compared with lower-speed DRAM options.
- Wide data path (×32): 4M × 32 organization provides a 32-bit data interface for efficient bus utilization.
- LVTTL interface: Simplifies integration with TTL-logic systems and common memory controllers.
- Compact TSOP II package: 86-TSOP II (0.400", 10.16 mm width) supports dense board layouts while maintaining standard surface-mount assembly.
- Standard supply range: 3.0 V to 3.6 V operation aligns with common 3.3 V power domains.
- Commercial temperature range: Rated 0°C to 70°C for typical commercial electronics environments.
Why Choose IC DRAM 128MBIT PAR 86TSOP II?
The IS42S32400J-6TL delivers a straightforward, specification-driven SDRAM solution: 128 Mbit capacity in a 4M × 32 organization, with a 166 MHz clock and 5.4 ns access time in an 86-TSOP II package. These characteristics make it suitable for designs that need compact, board-level volatile memory with LVTTL interfacing and standard 3.3 V power.
Manufactured by ISSI (Integrated Silicon Solution Inc), the device is positioned for engineers and procurement teams seeking a defined-performance SDRAM component for commercial-temperature applications where a 128 Mbit DRAM is required.
Request a quote or submit an inquiry to obtain pricing, lead time, and availability for the IS42S32400J-6TL.
