IS42S32400J-6BLI-TR
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 438 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S32400J-6BLI-TR – IC DRAM 128MBIT PAR 90TFBGA
The IS42S32400J-6BLI-TR is a 128 Mbit volatile SDRAM device organized as 4M × 32 and implemented in a DRAM architecture. It is supplied in a 90‑TFBGA (8×13) package and manufactured by ISSI, Integrated Silicon Solution Inc.
Designed for systems requiring external SDRAM, the device offers a 166 MHz clock frequency and a 5.4 ns access time, a LVTTL memory interface, and a 3.0 V–3.6 V supply range. It supports an operating ambient temperature range of −40°C to 85°C.
Key Features
- Memory Core and Capacity 128 Mbit DRAM organized as 4M × 32, provided as SDRAM for synchronous memory applications.
- Performance 166 MHz clock frequency with a 5.4 ns access time, enabling low-latency memory access within the specified timing.
- Interface LVTTL memory interface for compatibility with LVTTL signaling domains.
- Power Operates from a 3.0 V to 3.6 V supply range, matching common 3.3 V system rails.
- Package 90‑TFBGA package (8×13) for board-level mounting in a ball-grid array format.
- Environmental Operating ambient temperature range of −40°C to 85°C.
- Volatility Volatile memory (DRAM) suitable for temporary data storage and buffering.
Typical Applications
- Embedded memory expansion — External SDRAM solution for systems that require 128 Mbit of synchronous DRAM with a 32-bit data organization.
- High-speed data buffering — Suitable where a 166 MHz clock and 5.4 ns access time support fast read/write buffering.
- Industrial and commercial equipment — Supports operation across −40°C to 85°C and 3.0 V–3.6 V supply rails for broad temperature and voltage environments.
- Board-level memory implementations — Delivered in a 90‑TFBGA (8×13) package for ball-grid array mounting on printed circuit boards.
Unique Advantages
- Predictable access performance: The 5.4 ns access time provides defined low-latency access characteristics for timing-sensitive designs.
- Synchronous SDRAM operation: 166 MHz clocked SDRAM supports coordinated timing in systems using synchronous memory.
- 32-bit data organization: 4M × 32 layout enables direct use in 32-bit wide memory buses without additional packing.
- LVTTL interface compatibility: LVTTL signaling support simplifies integration with controllers and logic using the same interface standard.
- Wide supply range: 3.0 V–3.6 V operation aligns with common 3.3 V system power rails.
- Extended operating temperature: −40°C to 85°C rating supports use in a wide range of ambient conditions.
Why Choose IS42S32400J-6BLI-TR?
The IS42S32400J-6BLI-TR delivers a clear combination of synchronous DRAM performance, a 32-bit organization, and practical supply and temperature ranges for systems that need 128 Mbit of volatile memory. Its 166 MHz clocking and 5.4 ns access time provide measurable timing characteristics for designs with defined performance requirements.
Manufactured by ISSI and provided in a 90‑TFBGA (8×13) package, the device is appropriate for board-level integration where a LVTTL interface and 3.0 V–3.6 V supply compatibility are required. It is suited to design teams seeking a specification-driven memory component for mid-frequency SDRAM applications.
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