IS42S32400J-6TLI-TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 332 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization4M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32400J-6TLI-TR – IC DRAM 128MBIT PAR 86TSOP II

The IS42S32400J-6TLI-TR is a 128 Mbit volatile SDRAM device organized as 4M × 32. It provides synchronous DRAM storage with a defined clock frequency and access time for external memory applications.

Packaged in an 86-pin TSOP II (86-TFSOP) and specified for a 3.0 V to 3.6 V supply and an operating temperature range of −40°C to 85°C, this part targets designs that require a mid-density SDRAM with defined timing and standard signaling.

Key Features

  • Memory Technology  SDRAM volatile memory with a total capacity of 128 Mbit organized as 4M × 32.
  • Performance  Rated clock frequency of 166 MHz with an access time of 5.4 ns for synchronous memory operations.
  • Interface  LVTTL memory interface signaling.
  • Power  Operating supply voltage range of 3.0 V to 3.6 V.
  • Package  Available in an 86-TFSOP / 86-TSOP II package (0.400" / 10.16 mm width) for surface-mount applications.
  • Temperature Range  Specified for operation from −40°C to 85°C (TA).

Unique Advantages

  • Mid-density SDRAM capacity: 128 Mbit organization (4M × 32) provides predictable memory sizing for designs requiring external DRAM.
  • Defined timing characteristics: 166 MHz clock frequency and 5.4 ns access time enable consistent synchronous memory performance.
  • Standard LVTTL signaling: Interfaces using LVTTL signaling for integration with LVTTL-capable controllers and logic.
  • Wide supply tolerance: 3.0 V to 3.6 V range supports standard 3 V system power domains.
  • Compact TSOP II package: 86-pin TSOP II footprint (0.400" / 10.16 mm width) suitable for surface-mount PCB layouts.
  • Extended operating temperature: −40°C to 85°C ambient rating for temperature-varied environments.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The IS42S32400J-6TLI-TR delivers a clearly specified 128 Mbit SDRAM option with defined timing (166 MHz clock, 5.4 ns access) and a 4M × 32 organization. Its LVTTL interface, 3.0–3.6 V supply range, and 86-TSOP II package make it a straightforward choice when an external synchronous DRAM with these exact electrical and physical characteristics is required.

This device is appropriate for designs that need a mid-density SDRAM with predictable timing and electrical parameters and for engineers who require a TSOP II packaged memory device specified for −40°C to 85°C operation.

Request a quote or submit an inquiry to check availability, pricing, and lead time for the IS42S32400J-6TLI-TR.

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