IS42S32400J-7BLI-TR
| Part Description |
IC DRAM 128MBIT PAR 90TFBGA |
|---|---|
| Quantity | 409 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S32400J-7BLI-TR – IC DRAM 128MBIT PAR 90TFBGA
The IS42S32400J-7BLI-TR is a 128‑Mbit SDRAM device configured as 4M × 32, supplied by Integrated Silicon Solution Inc (ISSI). It delivers synchronous DRAM storage with a 143 MHz clock specification and an access time of 5.4 ns.
Designed for systems that require parallel SDRAM memory in a compact 90‑TFBGA (8×13) package, the device supports LVTTL signaling and operates from 3.0 V to 3.6 V with an ambient temperature range of −40 °C to 85 °C.
Key Features
- Memory Core 128 Mbit SDRAM organized as 4M × 32 for parallel memory architectures.
- Performance 143 MHz clock frequency and 5.4 ns access time to support synchronous data transfers.
- Interface LVTTL memory interface for compatibility with 3.3 V logic domains.
- Power Operates from 3.0 V to 3.6 V to match common 3.3 V system power rails.
- Package 90‑TFBGA package (8×13) providing a compact footprint for board-level integration.
- Operating Temperature Specified for −40 °C to 85 °C ambient operation.
Typical Applications
- Embedded memory subsystems — Provides 128‑Mbit SDRAM storage for systems requiring synchronous parallel DRAM.
- Buffering and working memory — Suited for applications needing low-latency access (5.4 ns) and a 143 MHz clocking domain.
- 3.3 V logic systems — LVTTL interface and 3.0–3.6 V supply compatibility make it suitable for designs using 3.3 V signaling.
- Temperature‑sensitive deployments — Rated for −40 °C to 85 °C for use in environments within this ambient range.
Unique Advantages
- Compact BGA footprint: The 90‑TFBGA (8×13) package reduces board area for space‑constrained designs.
- Synchronous DRAM performance: 143 MHz clocking and 5.4 ns access time provide deterministic synchronous memory timing.
- 3.0–3.6 V supply range: Compatible with common 3.3 V power rails for straightforward integration.
- LVTTL interface: Direct LVTTL signaling support simplifies interface design with 3.3 V logic.
- Industrial temperature range: −40 °C to 85 °C rating supports operation across a wide ambient temperature window.
- Manufacturer assurance: Produced by ISSI (Integrated Silicon Solution Inc), a known memory device supplier.
Why Choose IS42S32400J-7BLI-TR?
The IS42S32400J-7BLI-TR positions itself as a compact, synchronous DRAM option for designs requiring 128 Mbit of parallel SDRAM with LVTTL interfacing and 3.3 V-compatible power. Its combination of a 143 MHz clock rating, 5.4 ns access time, and a 90‑TFBGA package make it suitable for systems that balance performance and board‑area constraints.
This device is appropriate for engineers specifying a reliable SDRAM memory component from ISSI for embedded applications operating within the specified voltage and temperature ranges.
Request a quote or contact sales to inquire about availability, pricing, and lead times for the IS42S32400J-7BLI-TR.
