IS42S32400J-7BL-TR

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 29 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization4M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32400J-7BL-TR – IC DRAM 128MBIT PAR 90TFBGA

The IS42S32400J-7BL-TR is a 128 Mbit volatile SDRAM device from ISSI. It is organized as 4M × 32 with a LVTTL memory interface and presented in a 90‑TFBGA (8×13) package.

This synchronous DRAM device targets designs that require mid-density, high-speed volatile memory with a specified clock frequency of 143 MHz and an access time of 5.4 ns.

Key Features

  • Memory  128 Mbit DRAM organized as 4M × 32, providing a straightforward memory map for system integration.
  • Technology  SDRAM (synchronous DRAM) architecture supporting a clock frequency of 143 MHz and an access time of 5.4 ns for timing-aware designs.
  • Interface  LVTTL memory interface for compatible logic-level signaling.
  • Power  Rated supply voltage range of 3.0 V to 3.6 V to match common 3 V system rails.
  • Package  90‑TFBGA (8×13) package case suitable for compact board layouts.
  • Operating Range  Specified ambient operating temperature range of 0°C to 70°C (TA).
  • Mounting/Type  Volatile memory device intended for soldered PCB mounting in a TFBGA package.

Typical Applications

  • Systems requiring volatile DRAM  Provides 128 Mbit of synchronous volatile memory for general-purpose buffering and temporary data storage.
  • Designs using LVTTL signaling  Direct LVTTL interface simplifies integration into systems that use TTL-compatible memory control logic.
  • Space-constrained PCBs  90‑TFBGA (8×13) package helps reduce board footprint where package density matters.

Unique Advantages

  • Clear memory organization: 4M × 32 organization simplifies addressing and memory layout in system designs.
  • Synchronous operation with quantified timing: 143 MHz clock frequency and 5.4 ns access time enable predictable timing behavior for system designers.
  • Wide 3 V supply compatibility: 3.0 V to 3.6 V supply range aligns with common 3 V power rails for straightforward power domain integration.
  • Compact BGA footprint: 90‑TFBGA (8×13) package supports higher-density board designs without changing the device functionality.
  • Manufacturer identification: Supplied by ISSI (Integrated Silicon Solution Inc.), providing a clear vendor source for procurement and documentation.

Why Choose IS42S32400J-7BL-TR?

The IS42S32400J-7BL-TR positions itself as a mid-density SDRAM device offering a defined combination of capacity (128 Mbit), synchronous timing (143 MHz, 5.4 ns access), and a compact 90‑TFBGA package. These characteristics make it suitable for designs that require predictable SDRAM timing and a small PCB footprint.

This device is appropriate for engineers and procurement teams specifying volatile SDRAM with LVTTL signaling and a 3.0 V–3.6 V supply range, where clear device organization and package dimensions are important selection criteria.

Request a quote or submit a sales inquiry to check availability, lead times, and pricing for IS42S32400J-7BL-TR.

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