IS42S32400J-6BL-TR

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 625 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization4M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32400J-6BL-TR – IC DRAM 128MBIT PAR 90TFBGA

The IS42S32400J-6BL-TR is a 128 Mbit SDRAM device organized as 4M × 32, manufactured by ISSI, Integrated Silicon Solution Inc. It is supplied in a 90-TFBGA (8×13) package and operates from a 3.0 V to 3.6 V supply.

Designed as a volatile DRAM memory component with an LVTTL interface, the device supports a 166 MHz clock frequency and an access time of 5.4 ns, and is specified for operation from 0°C to 70°C.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32; memory format is DRAM for volatile system memory.
  • Performance Clock frequency 166 MHz with an access time of 5.4 ns to support moderate-performance memory operations.
  • Interface LVTTL memory interface for logic-level signaling compatibility.
  • Voltage Supply voltage range of 3.0 V to 3.6 V suitable for standard 3.3 V systems.
  • Package 90-TFBGA (8×13) supplier device package for compact board-level integration.
  • Temperature Range Operating temperature range 0°C to 70°C (TA) for commercial-grade applications.

Typical Applications

  • Embedded Systems Provides 128 Mbit SDRAM for system memory where a 32-bit data path and compact BGA package are required.
  • Communications Equipment Suitable as working memory or buffering in designs that use LVTTL signaling and require 166 MHz operation.
  • Consumer Electronics Fits space-constrained designs needing volatile SDRAM in a 90‑TFBGA footprint with a 3.0–3.6 V supply.

Unique Advantages

  • Compact BGA Packaging: 90‑TFBGA (8×13) package reduces PCB footprint while supporting required memory capacity.
  • Wide Data Path: 4M × 32 organization provides a 32-bit data width for higher bus throughput compared with narrower configurations.
  • Defined Performance: 166 MHz clock frequency and 5.4 ns access time deliver predictable timing for system designers.
  • Standard LVTTL Interface: Simplifies signal-level integration with LVTTL-compatible logic.
  • 3.0–3.6 V Supply Range: Compatible with common 3.3 V power rails used in many electronic systems.
  • Commercial Temperature Rating: 0°C to 70°C specification aligns with typical commercial-environment deployments.

Why Choose IC DRAM 128MBIT PAR 90TFBGA?

The IS42S32400J-6BL-TR positions itself as a straightforward, specification-driven SDRAM option for designs that require 128 Mbit of volatile memory in a compact 90‑TFBGA package. Its 4M × 32 organization, LVTTL interface, and defined timing characteristics make it suitable for integration into systems with established 3.3 V power domains.

Manufactured by ISSI, Integrated Silicon Solution Inc., the device is appropriate for designers seeking a commercially rated SDRAM with clear electrical and mechanical parameters documented in the manufacturer’s specifications.

Request a quote or contact sales to discuss availability, pricing, and technical requirements for the IS42S32400J-6BL-TR.

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