IS42S32400F-7TLI-TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 125 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-7TLI-TR – IC DRAM 128MBIT PAR 86TSOP II

The IS42S32400F-7TLI-TR is a 128 Mbit SDRAM organized as 4M × 32 with a parallel memory interface. It delivers high-speed synchronous DRAM functionality with a specified clock frequency of 143 MHz and an access time of 5.4 ns for designs requiring fast, parallel memory access.

Packaged in an 86-TSOP II (10.16 mm width) footprint and specified for operation from -40°C to 85°C, this device is suitable for systems requiring a compact, high-density SDRAM operating from a 3.0 V to 3.6 V supply.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 4M × 32, providing a 32-bit wide parallel data path.
  • Performance Supports a clock frequency of 143 MHz with a typical access time of 5.4 ns for high-speed synchronous operation.
  • Voltage Supply Operates from 3.0 V to 3.6 V, matching standard 3V SDRAM system power rails.
  • Package Available in an 86-TFSOP / 86-TSOP II package (0.400", 10.16 mm width) for space-optimized board layouts.
  • Temperature Range Rated for operation from -40°C to 85°C (TA), supporting extended temperature system requirements.
  • Interface Parallel memory interface suitable for synchronous DRAM integration in parallel-data-path systems.

Typical Applications

  • Parallel-Interface Memory Systems Acts as system DRAM where a parallel 32-bit data path and SDRAM timing are required.
  • High-Speed Buffering Provides fast buffering in designs leveraging a 143 MHz clock and 5.4 ns access time.
  • Compact Board Designs Suited for applications needing 128 Mbit density in an 86-TSOP II package to save PCB area.

Unique Advantages

  • 128 Mbit Density: Offers substantial on-board memory capacity in a single DRAM device to minimize component count.
  • 32-Bit Organization (4M × 32): Enables wide parallel data transfers for systems designed around 32-bit data buses.
  • High-Frequency Operation: Rated to 143 MHz with a 5.4 ns access time to support time-critical memory operations.
  • Wide Operating Voltage: 3.0 V to 3.6 V range aligns with common 3V system power rails for straightforward power integration.
  • Compact TSOP II Footprint: 86-TSOP II package (10.16 mm width) balances density and manufacturability for space-constrained designs.
  • Extended Temperature Range: -40°C to 85°C rating supports deployments across a broad ambient temperature range.

Why Choose IS42S32400F-7TLI-TR?

The IS42S32400F-7TLI-TR provides a verified 128 Mbit SDRAM solution with a 32-bit parallel organization, targeted at systems that require fast synchronous DRAM access at up to 143 MHz. Its combination of density, access performance, and an industry-standard 86-TSOP II package makes it appropriate for compact, performance-oriented designs operating from typical 3V power rails.

Manufactured by Integrated Silicon Solution Inc., this device is positioned for engineers and procurement teams seeking a clear specification set—memory size, timing, voltage, package, and temperature—to support design decisions and system integration.

Request a quote or contact sales to discuss availability and pricing for the IS42S32400F-7TLI-TR.

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