IS42S32800B-6B

The IS42S32800B-6B is a 256‑Mbit synchronous DRAM organized as 8M × 32 (implemented as four internal banks of 2M × 32). It provides a fully synchronous interface with an internal pipelined architecture, supporting programmable burst lengths and CAS latencies for flexible memory access patterns.

Designed for systems that require high memory bandwidth, this device offers clock-rate operation up to 166 MHz, LVTTL interface signaling, and a compact 90‑TFBGA (8×13) package for space-constrained designs.

Key Features

• Memory Architecture  Quad-bank organization: four internal banks of 2M × 32 bits (total 8M × 32) delivering 256 Mbit of DRAM storage.
• High‑speed Operation  Clock rates supported at 166/143 MHz with an access time of 5.5 ns, enabling high-throughput synchronous transfers.
• Flexible Burst and Latency  Programmable burst lengths of 1, 2, 4, 8, or full page and CAS latency selectable at 2 or 3 to match system timing requirements.
• Burst and Access Control  Burst‑Read‑Single‑Write capability, burst stop function, and individual byte control via DQM0–DQM3 for granular data masking.
• Auto and Self Refresh  Supports Auto Refresh and Self Refresh with 4096 refresh cycles/64 ms (and 4096/32 ms for industrial grade) to maintain data integrity.
• Power and Interface  Single +3.3 V (±0.3 V) supply with LVTTL interface signaling; operating voltage range listed as 3.0 V to 3.6 V.
• Package and Mounting  90‑TFBGA package (8×13 mm, 90 balls, 0.8 mm ball pitch) for high‑density surface mounting.
• Command and Timing Features  Concurrent auto precharge, programmable mode register, and registered sampling of inputs on the positive clock edge (CLK) for deterministic timing.
• Reliability Features  Internal pipelined architecture with four internal banks to improve throughput for sequential and interleaved accesses.

Typical Applications

• High‑bandwidth systems  Used where sustained data throughput is required; supports burst transfers and pipelined access to maximize effective bandwidth.
• Memory buffering  Suitable for frame buffering and intermediate data storage that benefit from selectable burst lengths and byte‑level masking.
• Embedded synchronous memory  Integrates into designs needing a synchronous DRAM interface with programmable mode and deterministic clocked operation.

Unique Advantages

• Programmable performance tuning: Selectable CAS latencies and burst lengths allow designers to tune latency versus throughput for the target workload.
• Four‑bank organization: Internal bank architecture enables interleaved accesses and higher effective bandwidth under concurrent access patterns.
• Compact BGA footprint: 90‑TFBGA (8×13) package provides a high‑density surface mount option for space-constrained PCBs.
• Synchronous, pipelined design: Fully synchronous operation with registered inputs on CLK and internal pipelining supports predictable timing and system integration.
• Robust refresh options: Auto and Self Refresh support with specified refresh cycle timing to maintain data across operating conditions.
• 3.3 V system compatibility: Single +3.3 V supply simplifies power rail requirements for many legacy and contemporary systems.

Why Choose IC DRAM 256MBIT PAR 90TFBGA?

The IS42S32800B-6B is positioned as a synchronous DRAM device for designs that require configurable burst behavior, selectable CAS latency, and a compact package footprint. Its quad‑bank, pipelined architecture and support for high clock rates make it suitable for systems prioritizing memory throughput and deterministic synchronous access.

This device is appropriate for engineers specifying DRAM for high‑bandwidth buffering and embedded memory subsystems where 3.3 V operation, programmable modes, and a 90‑TFBGA package meet form‑factor and electrical requirements.

If you need pricing, availability, or a formal quote for the IS42S32800B-6B, submit a request to your procurement or sales channel to obtain a quote or technical support.