IS42S32800B-6T

The IS42S32800B-6T is a 256‑Mbit synchronous DRAM (SDRAM) organized as 8M × 32 with a parallel interface and four internal banks. It implements a fully synchronous, pipelined architecture with registered inputs on the positive clock edge for predictable timing and high throughput.

Designed for systems requiring high memory bandwidth, the device delivers programmable burst operation, selectable CAS latency, and standard SDRAM control features to support robust memory subsystem designs operating from a single +3.3 V supply.

Key Features

• Core & Architecture  Quad-bank SDRAM organization (2M × 32 per bank × 4 banks) with an internal pipelined architecture for sustained data transactions.
• Memory Size & Organization  256 Mbit capacity organized as 8M × 32, providing wide 32‑bit data paths for parallel memory systems.
• Performance & Timing  Supports clock rates of 166 MHz and 143 MHz, with CAS latency options of 2 or 3 and an access time of 5.5 ns.
• Burst & Mode Flexibility  Programmable burst lengths of 1, 2, 4, 8 or full page with interleaved or linear burst types and a programmable mode register.
• Data Control  Individual byte control via DQM0–DQM3 and support for burst‑read/single‑write and burst stop functions.
• Refresh & Power Management  Auto Refresh and Self Refresh supported; typical refresh: 4096 cycles/64 ms (15.6 µs/row). Clock Enable (CKE) supports entry to power down and self refresh modes.
• Supply & Interface  Single +3.3 V ±0.3 V supply (3.0 V–3.6 V) with LVTTL interface signaling and parallel memory interface.
• Package & Temperature  Available in an 86‑pin TSOP‑II (86‑TFSOP, 0.50 mm pin pitch, 8 × 13 mm footprint; 0.400", 10.16 mm width) and rated for 0 °C to 70 °C ambient operating temperature.

Typical Applications

• High‑Bandwidth Memory Subsystems  For designs that require sustained data throughput, the IS42S32800B-6T provides synchronous, pipelined operation and programmable bursts to match system timing.
• Parallel SDRAM Interfaces  Suited to systems using parallel memory buses where a 32‑bit wide data path and byte masking (DQM0–3) are required.
• Configurable Latency/Burst Designs  Useful in applications that need selectable CAS latency and burst lengths to tune performance versus system timing constraints.

Unique Advantages

• High throughput capability: 166 MHz clock rate combined with an internal pipelined architecture supports sustained, high‑speed transfers.
• Flexible data handling: Programmable burst lengths and burst type options plus individual byte control (DQM0–3) enable tailored data transactions.
• Robust refresh and low‑power options: Auto and self refresh modes with CKE control allow predictable refresh management and entry to low‑power states.
• Single‑supply operation: Standard +3.3 V ±0.3 V supply simplifies power rail design for systems using conventional 3.3 V logic.
• Compact TSOP‑II package: 86‑pin TSOP‑2 package with 0.50 mm pitch provides a board‑level footprint suitable for space‑constrained designs.

Why Choose IS42S32800B-6T?

The IS42S32800B-6T positions itself as a straightforward, high‑bandwidth SDRAM building block for parallel memory subsystems. With selectable CAS latency, programmable burst modes, and byte‑level data control, it enables designers to tune memory behavior to match system timing and throughput needs while operating from a single +3.3 V supply.

This device is appropriate for engineers and teams designing systems that require predictable synchronous timing, configurable burst transfers, and efficient refresh/power management within a commercial temperature range.

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