 | | IS42S32160D-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 539 | |
 | | IS42S32160D-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,174 | |
 | | IS42S32160D-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 102 | |
 | | IS42S32160D-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 205 | |
 | | IS42S32160D-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,109 | |
 | | IS42S32160F-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,163 | |
 | | IS42S32160F-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 641 | |
 | | IS42S32160F-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,795 | |
 | | IS42S32160F-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 62 | |
 | | IS42S32160F-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,076 | |
 | | IS42S32160F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,803 | |
 | | IS42S32160F-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 159 | |
 | | IS42S32160F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,389 | |
 | | IS42S32160F-75EBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 690 | |
 | | IS42S32160F-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 504 | |
 | | IS42S32160F-75EBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,664 | |
 | | IS42S32160F-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: N/A | 1,688 | |
 | | IS42S32160F-75ETL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,168 | |
 | | IS42S32160F-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 540 | |
 | | IS42S32160F-75ETLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 148 | |