IS42S83200B-6TL

The IS42S83200B-6TL is a 256 Mbit synchronous DRAM (SDRAM) device organized as 32M × 8 with a quad-bank architecture and fully synchronous, pipeline operation. All inputs and outputs are registered to the rising edge of the clock, enabling high-speed, predictable data transfers for systems that require synchronous parallel memory.

Designed for 3.0 V–3.6 V systems (nominal 3.3 V) and supplied in a 54-pin TSOP-II package, the device delivers selectable CAS latency and programmable burst behavior to match a range of timing and throughput requirements. The datasheet also notes availability in industrial temperature ranges and lead-free options.

Key Features

• Core Architecture Quad-bank SDRAM with internal bank structure to hide row access/precharge and support pipelined, high-speed transfers; all signals referenced to the positive clock edge.
• Memory Configuration 256 Mbit capacity organized as 32M × 8 (8M × 8 × 4 banks).
• Performance Supports clock frequencies up to 166 MHz (CL=3) with an access time from clock of 5.4 ns at CAS latency = 3; CAS latency programmable to 2 or 3 clocks.
• Burst & Addressing Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports random column address every clock cycle and burst termination via burst stop or precharge commands.
• Refresh & Power Management Auto refresh (CBR) and self-refresh modes supported; 8K refresh cycles every 64 ms; includes power-down functionality.
• Interface LVTTL-compatible inputs/outputs and a parallel memory interface for conventional SDRAM system integration.
• Voltage Operates from 3.0 V to 3.6 V (VDD/VDDQ nominal 3.3 V as specified in the datasheet).
• Package & Temperature 54-pin TSOP-II package (0.400", 10.16 mm width); standard operating temperature 0°C to 70°C (TA), with datasheet indicating availability in industrial temperature variants.

Unique Advantages

• Predictable synchronous timing: Fully synchronous design and registered I/O simplify timing closure by aligning all signals to the clock edge.
• Configurable latency and burst control: Programmable CAS latency and multiple burst length/sequence options allow designers to tune throughput and latency for specific access patterns.
• Banked architecture for throughput: Four internal banks and interleaving hide precharge times and support overlapping accesses to improve sustained data rates.
• Power and refresh flexibility: Auto refresh, self-refresh, and power-down modes provide options to manage power consumption while meeting refresh requirements (8K refresh cycles/64 ms).
• Industry-standard interface and package: LVTTL-compatible signals and a compact 54-pin TSOP-II footprint simplify integration into existing parallel SDRAM designs.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200B-6TL offers a balanced combination of high-speed synchronous operation, flexible burst and latency programming, and a compact TSOP-II package for systems requiring 256 Mbit of parallel SDRAM. Its quad-bank architecture and LVTTL interface make it suitable for designs that need predictable clock-referenced transfers and configurable throughput.

With standard 3.0 V–3.6 V supply operation, defined timing parameters (166 MHz, 5.4 ns access at CL=3), and support for power-saving refresh modes, this device is aimed at engineers seeking a robust, configurable SDRAM building block backed by datasheet-defined behaviors and package options.

If you would like pricing, availability, or a formal quote for IS42S83200B-6TL, please submit a parts inquiry or request a quote through your procurement process.