IS42S83200B-7TL

The IS42S83200B-7TL is a 256 Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with an internal quad-bank architecture. It implements a fully synchronous, pipelined design optimized for high-speed burst data transfer in parallel memory systems.

Designed for systems operating from a 3.0 V to 3.6 V supply and a 0°C to 70°C ambient range, this device targets applications that require programmable burst control, selectable CAS latency, and standard LVTTL signaling in a 54-pin TSOP-II package.

Key Features

• Core / Architecture Quad-bank SDRAM with fully synchronous, pipelined operation; all signals referenced to the rising edge of the clock.
• Memory Organization & Size 256 Mbit total capacity, organized as 32M × 8.
• Performance & Timing −7 speed grade with a 143 MHz clock frequency and an access time from clock of 5.4 ns (CAS latency = 3). Programmable CAS latency (2 or 3 clocks).
• Burst & Sequencing Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations.
• Refresh & Power Modes Auto Refresh (CBR) and Self Refresh supported, with 8K refresh cycles every 64 ms. Includes power-down mode for reduced power during idle periods.
• Interface & Signaling Parallel memory interface with LVTTL-compatible inputs and outputs.
• Power Operates from a 3.0 V to 3.6 V power supply range.
• Package & Temperature Available in a 54-pin TSOP-II (0.400", 10.16 mm width) package; specified operating ambient temperature: 0°C to 70°C.

Typical Applications

• Embedded system memory — Provides 256 Mbit synchronous parallel memory for systems requiring burst-oriented DRAM.
• High-speed buffering — Suited for designs that use pipeline burst transfers and require programmable CAS latency.
• General-purpose system DRAM — Fits applications needing a standard LVTTL parallel SDRAM in a compact 54-pin TSOP-II footprint.

Unique Advantages

• Synchronous pipeline architecture: Enables high-speed burst transfers with all signals synchronized to the clock edge for predictable timing.
• Flexible burst control: Programmable burst lengths and sequence options allow tuning for different data access patterns.
• Selectable CAS latency: CAS = 2 or 3 options provide design trade-offs between clock rate and latency.
• Integrated refresh and low-power modes: Auto Refresh and Self Refresh plus power-down capability simplify system power management and data integrity.
• Industry-standard I/O and package: LVTTL signaling and a 54-pin TSOP-II package simplify integration into existing parallel memory designs.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200B-7TL offers a balanced combination of synchronous, quad-bank SDRAM architecture and practical system-level features—programmable CAS latency, flexible burst modes, and built-in refresh mechanisms—making it suitable for designs that require predictable, high-speed parallel memory behavior. Its 3.0 V–3.6 V supply range and 54-pin TSOP-II package enable integration into a range of standard embedded and system-level boards.

Backed by Integrated Silicon Solution, Inc. specifications, this 256 Mbit SDRAM is appropriate for engineers seeking a verified, feature-rich parallel memory device for applications where controlled burst access, LVTTL interfacing, and compact packaging are required.

Request a quote or submit an inquiry for the IS42S83200B-7TL to receive pricing and availability information for your design requirements.