IS42S83200B-7TLI

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 120 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S83200B-7TLI – IC DRAM 256MBIT PAR 54TSOP II

The IS42S83200B-7TLI is a 256 Mbit synchronous DRAM organized as 32M × 8 with a parallel LVTTL interface. It is a fully synchronous, quad-bank SDRAM designed for high-speed burst transfers with internal bank interleaving and pipeline architecture.

This device is optimized for designs requiring programmable burst lengths and CAS latencies, and it is available in a 54-pin TSOP-II package with an industrial operating temperature range for use in temperature-challenging environments.

Key Features

  • Memory Core  256 Mbit SDRAM organized as 32M × 8 with four internal banks to support interleaved access and row precharge hiding.
  • Performance  Supports clock frequencies of 166, 143 and 133 MHz (the -7 speed grade corresponds to 143 MHz). Access time from clock is 5.4 ns at CAS latency = 3.
  • Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential/interleave). Programmable CAS latency options of 2 and 3 clocks.
  • Interface & Operation  Fully synchronous operation with all signals referenced to the rising edge of CLK; LVTTL-compatible inputs and random column address capability every clock cycle.
  • Power  Designed for 3.0 V to 3.6 V operation (datasheet indicates VDD = 3.3 V / VDDQ = 3.3 V for the IS42S83200B family).
  • Refresh & Power Management  Auto Refresh (CBR), Self Refresh and 8K refresh cycles every 64 ms; includes power-down mode and auto precharge support.
  • Package & Temperature  Supplied in a 54-pin TSOP-II (0.400", 10.16 mm width) package and specified for an operating temperature range of −40 °C to 85 °C (TA).
  • Options  Available in industrial temperature grades and offered in lead-free versions according to the device family notes.

Typical Applications

  • High-speed buffering and caching  Burst read/write capability and programmable burst lengths enable high-throughput temporary storage and data buffering in synchronous systems.
  • System memory for parallel interfaces  Fully synchronous LVTTL interface and random column access each clock cycle facilitate integration into parallel memory subsystems.
  • Industrial equipment  Industrial temperature rating (−40 °C to 85 °C) allows use in temperature-challenging control and instrumentation platforms.
  • Space-constrained PCB designs  54-pin TSOP-II packaging provides a compact footprint for designs requiring board-level SDRAM density.

Unique Advantages

  • Flexible burst control: Programmable burst lengths and sequence options let designers tune transfer patterns for application-specific throughput and latency.
  • Bank interleave architecture: Four internal banks and internal precharge mechanisms help hide row access times and improve sustained data throughput.
  • Multiple speed grades: Available clock frequency grades (166, 143, 133 MHz) and CAS latency options provide performance scalability for different design targets.
  • Industrial temperature availability: Specified operation from −40 °C to 85 °C supports deployment in harsh or wide-temperature environments.
  • Compact package: 54-pin TSOP-II (0.400", 10.16 mm) offers a small-footprint solution for board-level memory expansion.
  • Power management features: Auto Refresh, Self Refresh and power-down modes reduce system-level power during idle periods.

Why Choose IS42S83200B-7TLI?

The IS42S83200B-7TLI combines synchronous, pipelined SDRAM architecture with programmable burst and latency options to deliver predictable, high-speed memory performance for parallel interface systems. Its quad-bank internal organization and automatic precharge modes enable efficient, continuous data transfers while minimizing access penalties.

With support for industry-standard 3.0–3.6 V supplies (datasheet nominal VDD = 3.3 V), LVTTL signaling, industrial temperature rating, and a compact 54-pin TSOP-II package, this device is well-suited for designs that require reliable, scalable volatile memory in constrained footprints and temperature-challenging environments.

Request a quote or submit a sales inquiry to obtain pricing, availability and additional product options for the IS42S83200B-7TLI.

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