IS42S83200D-6TLI

The IS42S83200D-6TLI is a 256Mbit synchronous DRAM organized as 32M × 8 with four internal banks and a parallel memory interface. It uses a pipelined, fully synchronous architecture to support high‑speed data transfers referenced to the rising edge of the clock.

Designed for systems requiring high‑performance synchronous DRAM, the device delivers programmable burst modes, selectable CAS latency, and industrial operating temperature support for robust operation in commercial and industrial environments.

Key Features

• Memory Organization — 256 Mbit organized as 32M × 8 with 4 internal banks for concurrent row management.
• Synchronous SDRAM Core — Fully synchronous operation with all inputs and outputs referenced to the positive clock edge and pipeline architecture for high‑speed transfers.
• Performance — Clock frequency up to 166 MHz (CAS‑latency = 3, -6 speed grade) with an access time from clock of 5.4 ns (CAS = 3).
• Programmable Burst & Latency — Programmable burst lengths (1, 2, 4, 8, full page), selectable sequential/interleave burst sequence, and CAS latency options of 2 or 3 clocks.
• Refresh & Self‑Maintenance — Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles with timing options (e.g., 8K/16 ms for A2 grade or 8K/64 ms for commercial/industrial/A1 grade as specified).
• Power — Single power supply operation centered at 3.3 V ±0.3 V (product supply range 3.0 V to 3.6 V).
• Interface — LVTTL-compatible interface with parallel memory bus and support for random column addressing every clock cycle, burst read/write and burst read/single write operations.
• Package & Temperature — 54‑pin TSOP II (0.400", 10.16 mm width) package with operating temperature range listed as −40 °C to +85 °C (TA) for industrial operation.

Typical Applications

• High‑speed buffering — Use as synchronous buffer memory where pipeline transfers and programmable bursts improve throughput.
• System memory in embedded designs — Suitable for embedded systems requiring a parallel SDRAM interface and industrial temperature operation.
• Data streaming and temporary storage — Supports burst read/write modes and random column access for streaming data scenarios.

Unique Advantages

• High clock capability: 166 MHz operation (CAS‑3) enables fast synchronous transfers as defined in the datasheet.
• Flexible burst control: Programmable burst lengths and sequence options let designers match access patterns to system needs.
• Robust refresh modes: Auto and self refresh with selectable refresh interval options provide reliability across operating modes.
• Industrial temperature range: Specified operation to −40 °C to +85 °C supports deployment in temperature‑sensitive applications.
• Standard TSOP II package: 54‑pin TSOP II footprint for compact board-level integration.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200D-6TLI positions itself as a practical choice when you need a synchronous, parallel DRAM device that balances high clock rates, programmable burst features, and industrial temperature operation. Its pipeline architecture and selectable CAS latency provide design flexibility for varied timing and throughput requirements.

This device is appropriate for designs requiring a 256 Mbit SDRAM in a 54‑pin TSOP II package, offering straightforward integration into systems that rely on LVTTL parallel memory interfaces and require controlled refresh and burst behavior.

If you would like pricing, availability, or to request a formal quote for the IS42S83200D-6TLI, please submit a quote request or contact sales for further assistance.