IS42S83200D-75ETLI

The IS42S83200D-75ETLI is a 256 Mbit synchronous DRAM organized as 32M × 8 with four internal banks and a parallel memory interface. The device implements a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock for predictable timing and throughput.

Designed for systems that require compact, parallel SDRAM in a 54‑pin TSOP II package, this device offers program‑mable burst control, selectable CAS latency and industrial temperature operation for robust, time‑deterministic external memory use.

Key Features

• Core / Memory Organization 256 Mbit SDRAM organized as 32M × 8 with 4 internal banks to support interleaved row access and hidden precharge.
• Performance Clock frequency 133 MHz and access time 5.5 ns (CAS latency = 2) for high‑speed parallel memory operations.
• Programmable Timing & Burst Selectable CAS latency (2 or 3 clocks) with programmable burst length (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave).
• Refresh & Self‑Maintenance Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles available per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade) as specified.
• Interface Parallel memory interface with LVTTL signaling referenced to the positive clock edge for synchronous operation.
• Power Single power supply, nominal 3.3 V (3.3 V ±0.3 V); operating range 3.0 V to 3.6 V.
• Package & Temperature 54‑pin TSOP II package (0.400", 10.16 mm width) with an operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• High‑speed external memory — Acts as synchronous parallel working memory where 133 MHz clocking and 5.5 ns access time support fast read/write buffering.
• Frame or buffer storage — Programmable burst lengths and interleave sequencing enable efficient block transfers for buffering applications.
• Industrial systems — Supported operating range to −40 °C to +85 °C suits designs requiring extended temperature operation.

Unique Advantages

• Deterministic synchronous timing: Fully synchronous, clock‑edge referenced I/O provides predictable latency and simplifies timing analysis.
• Flexible throughput control: Programmable CAS latency and burst length/sequence let designers tune performance for specific access patterns.
• Low‑voltage 3.3 V operation: Single 3.3 V supply (3.0–3.6 V range) aligns with common legacy system power rails.
• Robust refresh options: Support for Auto Refresh and Self Refresh with selectable refresh intervals (8K/16 ms or 8K/64 ms) for different grades.
• Compact standard package: 54‑pin TSOP II (10.16 mm width) provides a space‑efficient footprint for board‑level designs.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200D-75ETLI combines a synchronous, pipelined SDRAM architecture with programmable timing and burst features to deliver predictable, high‑speed parallel memory performance. Its 54‑pin TSOP II package and industrial temperature support make it suitable for board‑level designs that require compact external DRAM with configurable latency and refresh behavior.

This device is well suited to designers who need a time‑deterministic external memory solution with flexible burst control, LVTTL interface compatibility, and a 3.3 V single‑supply option for integration into existing system power domains.

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