IS42S83200D-7TLI-TR

The IS42S83200D-7TLI-TR is a 256-Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with four internal banks. It uses a pipeline architecture with fully synchronous operation where all inputs and outputs are referenced to the rising edge of the clock.

Targeted for systems requiring high-speed parallel memory, the device supports programmable burst lengths and CAS latencies, auto and self-refresh modes, and operates from a single 3.3 V ±0.3 V supply over an operating temperature range of −40°C to +85°C. The device is available in a 54-pin TSOP-II (0.400", 10.16 mm width) package.

Key Features

• Memory Architecture  256-Mbit SDRAM organized as 32M × 8 with 4 internal banks; fully synchronous operation and pipeline architecture for predictable timing.
• Performance  Supports a clock frequency of 143 MHz (–7 speed grade) with an access time of 5.4 ns (CAS latency = 3).
• Interface & Operation  Parallel memory interface with LVTTL signaling; programmable burst lengths (1, 2, 4, 8, full page), programmable burst sequence (sequential/interleave), and programmable CAS latency (2 or 3 clocks).
• Refresh & Power  Single power supply (3.3 V ±0.3 V / 3.0 V–3.6 V range), Auto Refresh (CBR) and Self Refresh support; 8K refresh cycles with selectable 16 ms or 64 ms intervals depending on grade.
• Burst & Timing Controls  Random column address every clock cycle; supports burst read/write and burst read/single write operations with burst termination via burst stop or precharge command.
• Package & Temperature  54-pin TSOP-II (54-TSOP II) package, 0.400" (10.16 mm) width; specified operating temperature −40°C to +85°C (TA).

Typical Applications

• High-speed memory subsystems  Acts as parallel SDRAM for systems requiring synchronous, clock-referenced memory with predictable latency.
• Burst data buffering  Programmable burst lengths and sequences enable efficient burst read/write operations and frame buffering.
• Industrial embedded systems  Operates across −40°C to +85°C and supports single-supply 3.3 V operation for industrial-temperature designs.

Unique Advantages

• Configurable burst behavior: Programmable burst lengths and sequence modes allow designers to optimize throughput and access patterns for specific workloads.
• Single-supply operation: 3.3 V ±0.3 V (3.0 V–3.6 V) operation simplifies power-rail design and integration into existing systems.
• Low-latency operation: 143 MHz clock support with 5.4 ns access time (CAS = 3) provides reduced memory access latency for time-sensitive applications.
• Robust refresh options: Auto and self-refresh modes plus selectable refresh intervals (8K cycles per 16 ms or 64 ms) support reliable data retention.
• Compact board footprint: 54-pin TSOP-II package (10.16 mm width) enables dense PCB layouts while maintaining a parallel memory interface.
• Predictable timing: Fully synchronous, clock-referenced pipeline architecture ensures deterministic timing behavior for system designers.

Why Choose IS42S83200D-7TLI-TR?

The IS42S83200D-7TLI-TR delivers a combination of 256-Mbit capacity, synchronous pipeline architecture, configurable burst/timing behavior, and industrial temperature operation that fits designs needing predictable high-speed parallel DRAM. Its support for programmable CAS latency, auto/self-refresh, and a single 3.3 V supply makes it suitable for memory subsystems where timing control and power simplicity are important.

This device is appropriate for engineers building embedded and industrial systems that require deterministic SDRAM performance, compact package options, and multiple refresh modes to match application requirements.

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