IS42S83200G-6TL

The IS42S83200G-6TL is a 256 Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with four internal banks and a parallel memory interface. It implements a pipelined, fully synchronous architecture with all I/O referenced to the rising edge of the clock.

Designed for systems requiring medium-density SDRAM in a compact 54‑pin TSOP II package, the device offers programmable burst operation, selectable CAS latency, and standard 3.3 V power, enabling predictable high-speed memory access and straightforward integration into commercial designs.

Key Features

• Memory Core  256 Mbit SDRAM organized as 32M × 8 with 4 internal banks for concurrent bank operation.
• Performance  -6 timing supports a clock frequency of 166 MHz with an access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and Retention  Auto Refresh (CBR) and Self Refresh supported; refresh count options include 8K cycles every 32 ms for A2 grade or every 64 ms for commercial and A1 grade devices.
• Interface  Parallel memory interface with LVTTL-compatible signaling for control and data lines.
• Power  Single power supply operation centered at 3.3 V (specified range 3.0 V to 3.6 V / 3.3 V ±0.3 V in datasheet).
• Package & Temperature  Available in a 54‑pin TSOP II package (0.400" / 10.16 mm width). Commercial operating temperature range: 0°C to +70°C (TA).

Unique Advantages

• Deterministic synchronous timing: Fully synchronous design with rising-edge clock reference simplifies timing analysis and system integration.
• Flexible performance scaling: Multiple timing grades in the family (200/166/143 MHz) and programmable CAS latency allow tuning for target system timing and throughput.
• Burst-optimized throughput: Programmable burst lengths and selectable sequences support sustained high-throughput transfers and flexible access patterns.
• Simplified power rails: Single 3.3 V supply (3.0–3.6 V) reduces power-rail complexity in board designs.
• Compact footprint: 54‑pin TSOP II package provides a space-efficient form factor for dense boards.
• Robust refresh options: Auto and self-refresh modes with documented refresh cycle intervals for different device grades support reliable data retention management.

Why Choose IS42S83200G-6TL?

The IS42S83200G-6TL positions itself as a straightforward, high-performance 256 Mbit SDRAM solution for commercial applications that require synchronous, burst-capable parallel memory in a compact TSOP II package. Its programmable burst behavior, selectable CAS latency, and documented timing grades make it suitable for designs that need deterministic memory timing and configurable throughput.

This device is appropriate for engineers and procurement teams seeking a vendor-supported SDRAM from Integrated Silicon Solution, Inc. with clear electrical, timing, and refresh specifications, enabling predictable integration and long-term design planning.

If you would like pricing or availability information, request a quote or submit an inquiry to receive a formal quote for the IS42S83200G-6TL.