IS42S83200G-6TLI-TR

The IS42S83200G-6TLI-TR is a 256 Mbit synchronous DRAM organized as 32M × 8 with four internal banks and a parallel memory interface. It implements a fully synchronous, pipelined architecture with programmable burst control and LVTTL signaling to support high-speed data transfer in systems requiring 3.3 V single-supply DRAM.

Targeted for designs that require compact board-level memory, this device delivers up to 166 MHz clock operation with low access latency and supports industrial-temperature operation to meet a range of embedded applications.

Key Features

• Memory Architecture: 256 Mbit SDRAM organized as 32M × 8 with four internal banks for concurrent bank operation and improved access efficiency.
• Clock and Timing: Fully synchronous operation with clock-referenced inputs/outputs; -6 speed grade supports 166 MHz clock frequency and typical access time of 5.4 ns.
• Programmable Burst and CAS: Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); CAS latency selectable (2 or 3 clocks).
• Refresh and Self-Refresh: Auto Refresh (CBR) and Self Refresh supported; refresh options include 8K cycles over 32 ms or 64 ms depending on grade.
• Power: Single power supply operation at 3.3 V ±0.3 V (listed voltage supply range 3.0 V–3.6 V) for standard system compatibility.
• Interface: LVTTL-compatible inputs with parallel DRAM interface and support for random column address every clock cycle; burst read/write and burst read/single write modes.
• Package and Mounting: 54-pin TSOP-II package (0.400", 10.16 mm width) suitable for compact PCB implementations.
• Operating Temperature: Specified operating temperature range −40 °C to +85 °C (TA) for industrial-environment use.

Typical Applications

• Embedded System Memory: Board-level SDRAM for embedded controllers and modules requiring 256 Mbit parallel memory with 3.3 V supply and industrial temperature range.
• Consumer and Industrial Electronics: Volatile main or frame-buffer memory in compact designs where TSOP-II packaging and synchronous burst modes are advantageous.
• Data Buffering and Caching: High-throughput temporary storage using programmable burst sequences and internal bank architecture to hide row access/precharge latency.

Unique Advantages

• Flexible Timing Options: Selectable CAS latencies (2 or 3) and multiple programmable burst lengths let designers tune performance to system timing and throughput needs.
• Pipelined, Banked Architecture: Four internal banks and pipeline operation improve effective bandwidth and help minimize access stalls for burst transfers.
• Industrial Temperature Support: Rated for −40 °C to +85 °C operation, enabling reliable use across a wide range of environmental conditions.
• Standard Single-Supply Operation: 3.3 V ±0.3 V supply simplifies power-rail design in systems standardized on 3.3 V logic.
• Compact Board-Level Footprint: 54-pin TSOP-II package provides a small, manufacturable package option for space-constrained PCBs.

Why Choose IS42S83200G-6TLI-TR?

The IS42S83200G-6TLI-TR offers a balance of speed, programmability, and compact packaging for systems that require 256 Mbit of parallel SDRAM. Its fully synchronous, pipelined architecture and selectable timing parameters make it suitable for applications that need predictable, high-throughput volatile memory with industrial-temperature capability.

This device is well suited to engineers and procurement teams building embedded platforms, instrumentation, or industrial electronics that demand a standard 3.3 V SDRAM solution with flexible burst modes, refresh options, and a TSOP-II footprint for board-level integration.

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