IS42S83200G-7BLI

The IS42S83200G-7BLI is a 256 Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with four internal banks and a pipeline architecture for high-speed data transfer. It provides a parallel SDRAM interface with programmable burst modes and timing options for use in systems requiring synchronized, high-throughput memory access.

Key attributes include a 143 MHz clock frequency rating (‑7 speed grade), programmable CAS latency, and support for auto- and self-refresh modes, making it suitable for embedded and system memory buffering applications that demand predictable synchronous operation.

Key Features

• Memory Core & Organization  256 Mbit SDRAM organized as 32M × 8 with four internal banks to support efficient row/column operations and bank interleaving.
• Synchronous Pipeline Architecture  Fully synchronous design with all signals referenced to the rising edge of the clock to enable deterministic timing and pipeline data transfer.
• Speed Grades & Timing  Clock frequency up to 143 MHz for the -7 grade with access times as low as 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst Control  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible read/write transfer patterns.
• Refresh & Retention  Supports auto refresh (CBR) and self refresh; refresh count options include 8K cycles every 32 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade).
• Interface & Logic Levels  LVTTL-compatible interface with parallel memory access signals for integration with standard SDRAM controllers.
• Power  Single power supply: 3.3 V ± 0.3 V (specified supply range 3.0 V to 3.6 V).
• Package & Temperature  Supplied in a 54-ball TFBGA (8 × 8) package with an operating ambient temperature range of -40°C to +85°C.

Typical Applications

• High-speed buffering  Used where pipeline SDRAM buffering is required to support sustained parallel data transfers and burst operations.
• System memory expansion  Suitable for designs needing a 256 Mbit parallel SDRAM device with configurable burst and timing behavior for controller-managed memory.
• Embedded controllers and FPGA memory  Employed as external synchronous memory for embedded systems or FPGA-based platforms that utilize parallel SDRAM interfaces.

Unique Advantages

• Deterministic synchronous operation: Fully synchronous inputs and outputs referenced to the clock simplify timing analysis and controller integration.
• Flexible performance tuning: Programmable CAS latency (2 or 3) and multiple burst lengths/sequences let designers optimize latency and throughput for application needs.
• Robust refresh options: Auto and self-refresh support plus selectable refresh rates (8K cycles/32 ms or 64 ms) provide adaptability across grades and power profiles.
• Industry-standard voltage: Operates from 3.0 V to 3.6 V (nominal 3.3 V), matching common system power rails.
• Compact BGA package: 54-ball TFBGA (8×8) offers a small-footprint surface-mount solution for space-constrained PCB designs.
• Wide operating temperature: Specified for -40°C to +85°C ambient operation for use in temperature-variable environments.

Why Choose IS42S83200G-7BLI?

The IS42S83200G-7BLI delivers a balanced combination of synchronous pipeline architecture, flexible burst control, and selectable timing that suits designs requiring predictable parallel SDRAM performance. Its 32M × 8 organization, programmable CAS latencies, and refresh modes allow system architects to tune memory behavior to specific throughput and power trade-offs.

This device is appropriate for engineers implementing external SDRAM in embedded systems, controllers, or FPGA platforms who need compact packaging, standard 3.3 V operation, and an industrial temperature range. The IS42S83200G-7BLI provides verifiable, datasheet-defined characteristics for reliable integration into long-term designs.

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