IS42S83200G-7TLI

The IS42S83200G-7TLI is a 256Mbit synchronous DRAM device organized as 32M × 8 with four internal banks and a parallel memory interface. It implements a fully synchronous pipeline architecture with LVTTL interface and is supplied from a single 3.3V ±0.3V power rail.

This device targets board-level designs that require high-speed, parallel SDRAM capacity in a 54-pin TSOP-II package and supports industrial operating temperatures down to -40°C and up to +85°C.

Key Features

• Core / Memory Organization  The device is organized as 32M × 8 with four internal banks, delivering a total memory size of 256 Mbit.
• Synchronous SDRAM Architecture  Fully synchronous operation with all signals referenced to the rising edge of the clock and LVTTL-compatible I/O.
• Performance  Supports clock frequency options including 200, 166 and 143 MHz; the -7 speed grade is specified at 143 MHz with access times down to 5.4 ns.
• Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave), with CAS latency options of 2 or 3 clocks.
• Refresh and Power Management  Auto Refresh (CBR) and Self Refresh support; refresh count options include 8K cycles per 32 ms or 64 ms depending on grade.
• Voltage and Interface  Single power supply 3.3V ±0.3V (3.0–3.6V) and parallel memory interface for direct board-level integration.
• Package and Mounting  54-pin TSOP-II (0.400", 10.16 mm width) package suitable for surface-mount assembly.
• Temperature Range  Specified operating temperature includes industrial range of -40°C to +85°C (TA).

Typical Applications

• Board-level Parallel Memory  Provides 256 Mbit of synchronous DRAM for systems requiring parallel SDRAM connectivity in a compact TSOP-II footprint.
• Industrial Control Systems  Industrial temperature specification (-40°C to +85°C) enables use in control and automation equipment needing reliable volatile storage.
• Embedded Designs with 3.3V Rails  Designed for embedded systems operating from a single 3.3V power rail that require programmable burst and latency options.
• Memory Expansion on Legacy Platforms  Fits applications that rely on parallel SDRAM organization and board-level TSOP-II mounting.

Unique Advantages

• Flexible Speed Grades:  Supports multiple clock frequency grades (200/166/143 MHz) with the -7 part specified at 143 MHz, allowing selection for system timing requirements.
• Programmable Performance:  Selectable CAS latency and burst configurations let designers tune throughput and latency for target workloads.
• Single Supply Simplicity:  Operates from a single 3.3V ±0.3V supply, simplifying power-rail design and integration.
• Banked Architecture:  Four internal banks enable hidden row access and improved effective throughput for burst transfers.
• Board-Level Package:  54-pin TSOP-II package (0.400", 10.16 mm width) provides a compact, surface-mount form factor for PCB-level memory implementations.
• Industrial Temperature Support:  Specified operation down to -40°C and up to +85°C for use in temperature-demanding environments.

Why Choose IS42S83200G-7TLI?

The IS42S83200G-7TLI combines a synchronous pipeline SDRAM architecture with flexible burst and latency programmability to deliver 256 Mbit of parallel memory suitable for board-level integration. Its single 3.3V supply, four-bank organization, and TSOP-II package cater to designs that require compact, high-speed volatile storage with industrial temperature capability.

This part is suitable for engineers specifying parallel SDRAM capacity with deterministic timing options and straightforward power requirements, and it is backed by Integrated Silicon Solution, Inc.'s published device specification and timing data.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S83200G-7TLI.