IS42S83200J-6TL

The IS42S83200J-6TL from ISSI (Integrated Silicon Solution Inc) is a 256 Mbit volatile SDRAM device organized as 32M × 8 with a parallel memory interface. It is supplied in a 54‑pin TSOP II package and is designed for systems that require compact, board‑level parallel DRAM memory.

Key characteristics include a 166 MHz clock frequency, 5.4 ns access time, a 3.0 V–3.6 V supply range, and an operating ambient temperature range of 0°C–70°C, making it suitable for a range of commercial electronic applications that need mid‑density SDRAM.

Key Features

• Memory Core  256 Mbit SDRAM organized as 32M × 8, providing standard parallel DRAM capacity for board‑level memory needs.
• Performance  Supports a 166 MHz clock frequency with a 5.4 ns access time for responsive memory access.
• Interface  Parallel memory interface consistent with DRAM format and organization (32M × 8).
• Voltage Supply  Operates from 3.0 V to 3.6 V, compatible with common 3 V system power rails.
• Package  54‑pin TSOP (0.400", 10.16 mm width) in a 54‑TSOP II supplier device package for compact board footprint.
• Operating Temperature  Rated for ambient operation from 0°C to 70°C (TA) for commercial temperature applications.

Typical Applications

• Embedded systems  Use as parallel SDRAM memory where a 256 Mbit 32M × 8 organization and 166 MHz clocking meet system memory requirements.
• Consumer electronics  Integrate into space‑constrained designs that require board‑level DRAM in a 54‑TSOP II package and a 0°C–70°C operating range.
• Data buffering  Provide mid‑density volatile memory with 5.4 ns access time for applications requiring fast read/write cycles in a parallel interface topology.

Unique Advantages

• Compact TSOP II package: 54‑pin TSOP (0.400", 10.16 mm width) minimizes PCB area for space‑sensitive designs.
• Balanced performance: 166 MHz clock combined with a 5.4 ns access time offers a practical performance point for mid‑density DRAM tasks.
• Standard parallel organization: 32M × 8 architecture simplifies integration into existing parallel DRAM memory subsystems.
• Common supply range: 3.0 V–3.6 V operation aligns with standard 3 V system rails to ease power design.
• Commercial temperature rating: 0°C–70°C ambient rating supports general commercial applications without additional thermal qualification.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200J-6TL positions itself as a straightforward, mid‑density SDRAM option from ISSI for designs that need a 256 Mbit parallel DRAM in a compact 54‑TSOP II footprint. Its combination of 32M × 8 organization, 166 MHz clocking, and 5.4 ns access time delivers a practical balance of capacity and responsiveness for commercial embedded and consumer applications.

This device is well suited to engineers specifying board‑level DRAM where standard voltage operation (3.0 V–3.6 V), a defined commercial temperature range, and a widely recognized package form factor are priorities for integration and lifecycle planning.

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