IS42S83200J-6TLI

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 110 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S83200J-6TLI – IC DRAM 256MBIT PAR 54TSOP II

The IS42S83200J-6TLI is a 256 Mbit volatile SDRAM organized as 32M × 8 with a parallel memory interface. It delivers synchronous DRAM operation at a clock frequency up to 166 MHz with an access time of 5.4 ns, targeted for designs that require compact, board-level dynamic memory.

Available in a 54‑lead TSOP II package (0.400" / 10.16 mm width) and rated for operation from −40°C to 85°C, this device is suited for applications that need a standardized SDRAM form factor, defined supply range, and predictable timing characteristics.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 32M × 8, providing a standard DRAM memory format for system memory implementations.
  • Performance Synchronous DRAM with a clock frequency up to 166 MHz and a specified access time of 5.4 ns for predictable timing behavior.
  • Interface Parallel memory interface suitable for conventional SDRAM system designs and memory controller integration.
  • Power Operates from a supply voltage range of 3.0 V to 3.6 V, matching common 3 V SDRAM power rails.
  • Package 54‑lead TSOP II (0.400", 10.16 mm width) surface-mount package for compact PCB implementations.
  • Temperature Range Specified for operation from −40°C to 85°C (TA), accommodating a wide ambient temperature span.

Typical Applications

  • Embedded system memory — Provides 256 Mbit of SDRAM capacity for embedded platforms that require board-level dynamic memory.
  • Consumer electronics — Fits applications needing compact, parallel SDRAM in a 54‑TSOP II package within the supplied voltage range.
  • Industrial equipment — Usable in systems operating across −40°C to 85°C where a standard SDRAM footprint and timing are required.

Unique Advantages

  • Standard SDRAM organization: 32M × 8 layout simplifies mapping with common memory controllers and software expectations.
  • Clear performance parameters: 166 MHz clock frequency and 5.4 ns access time provide defined timing for deterministic system design.
  • Wide ambient temperature range: −40°C to 85°C rating supports deployment in varied environmental conditions.
  • Compact TSOP II package: 54‑lead 0.400" (10.16 mm) TSOP II footprint enables high-density PCB layouts.
  • 3.0–3.6 V supply compatibility: Matches common 3 V SDRAM power rails for straightforward power design.

Why Choose IS42S83200J-6TLI?

IS42S83200J-6TLI offers a straightforward SDRAM solution with explicit electrical and timing specifications—256 Mbit capacity, 32M × 8 organization, 166 MHz clocking, and 5.4 ns access time—packaged in a compact 54‑lead TSOP II. Its defined supply range and wide operating temperature make it suitable for designs that require predictable, board-level dynamic memory behavior.

This device is appropriate for engineers and procurement teams specifying standard SDRAM capacity and timing for embedded, consumer, or industrial systems where a 54‑TSOP II package and 3.0–3.6 V operation are required.

Request a quote or submit a parts inquiry to confirm availability and pricing for IS42S83200J-6TLI.

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