IS42S83200J-7TL
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 955 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S83200J-7TL – 256Mbit SDRAM, 54-TSOP II
The IS42S83200J-7TL is a 256 Mbit volatile DRAM organized as 32M × 8 and implemented in SDRAM technology with a parallel memory interface. It delivers up to 143 MHz clock operation and 5.4 ns access characteristics in a compact 54-TSOP II package, targeting systems that require a discrete parallel SDRAM device with standard 3.3 V supply ranges.
Designed for integration where a dedicated parallel DRAM is required, the device offers a balance of speed, density, and footprint for board-level memory expansion and legacy parallel-memory interfaces.
Key Features
- Memory Architecture 256 Mbit capacity organized as 32M × 8, providing a standard byte-wide parallel memory layout.
- SDRAM Technology Synchronous DRAM implementation with a parallel interface for systems designed around SDRAM timing and control.
- Clock & Access Performance Rated for operation up to 143 MHz with an access time of 5.4 ns for responsive read/write cycles under specified conditions.
- Supply Voltage Operates from 3.0 V to 3.6 V, matching common 3.3 V embedded system power rails.
- Package Supplied in a 54-TSOP II package (0.400", 10.16 mm width) for compact board-level placement and established mounting processes.
- Operating Temperature Specified for ambient temperatures from 0°C to 70°C (TA) for standard commercial environments.
- Interface Parallel memory interface suitable for designs requiring discrete DRAM components with byte-wide data paths.
Unique Advantages
- Byte-wide Memory Organization: 32M × 8 arrangement simplifies integration into systems expecting an 8-bit data bus.
- High-Frequency Operation: Up to 143 MHz clock rating supports applications needing faster SDRAM transactions within the device’s specified timing.
- Standard 3.3 V Compatibility: 3.0 V–3.6 V supply range aligns with common 3.3 V system power rails for straightforward power design.
- Space-Efficient Packaging: 54-TSOP II package (10.16 mm width) provides a compact footprint for board-level memory implementations.
- Commercial Temperature Range: 0°C–70°C rating allows deployment in typical commercial-grade electronic equipment.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The IS42S83200J-7TL offers a practical combination of 256 Mbit density, SDRAM performance, and a compact 54-TSOP II package for designs that require a discrete parallel DRAM device. Its 32M × 8 organization and 3.0 V–3.6 V supply make it straightforward to integrate into systems with existing byte-wide memory buses and 3.3 V power domains.
This device is suitable for engineers and procurement teams specifying board-level SDRAM for commercial-temperature applications where a balance of speed (143 MHz), access performance (5.4 ns), and package footprint are the primary selection criteria.
Request a quote or contact sales to discuss availability and pricing for the IS42S83200J-7TL and to obtain further ordering information.
