IS42S83200J-6TL-TR

The IS42S83200J-6TL-TR from Integrated Silicon Solution Inc. (ISSI) is a 256 Mbit volatile SDRAM device organized as 32M × 8. It implements a parallel DRAM interface and is specified for operation with a clock frequency up to 166 MHz and an access time of 5.4 ns.

This device is intended for board-level memory expansion where compact form factor, defined supply voltage range, and standard SDRAM timing are required. Its package and electrical specifications make it suitable for designs requiring a mid-density external DRAM solution.

Key Features

• Memory Core 256 Mbit DRAM organized as 32M × 8 for byte-wide data paths and straightforward parallel memory mapping.
• SDRAM Technology & Performance Synchronous DRAM architecture with a clock frequency rated to 166 MHz and an access time of 5.4 ns to support timed, high-throughput memory cycles.
• Interface Parallel memory interface suitable for standard SDRAM bus implementations.
• Power Operates from a 3.0 V to 3.6 V supply range to match typical 3 V-class SDRAM power domains.
• Package 54‑lead TSOP II package (0.400", 10.16 mm width) for compact board-level integration.
• Temperature Range Specified operating ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• Embedded System Memory — Provides external DRAM capacity for microprocessor or FPGA-based systems that require a parallel SDRAM interface and mid-level density.
• Data Buffering — Serves as a board-level buffer or frame store where synchronous access and defined timing (166 MHz, 5.4 ns) are required.
• Consumer and Industrial Electronics — Fits designs that operate within the specified 0°C to 70°C ambient range and require a compact TSOP II package.

Unique Advantages

• High-density 256 Mbit capacity: Offers substantial memory within a single 54‑TSOP II device to reduce board-level component count.
• Defined performance parameters: 166 MHz clock rating and 5.4 ns access time provide clear timing targets for system integration and timing closure.
• Standard parallel SDRAM interface: Simplifies integration with existing SDRAM controller designs and common memory maps.
• Compact TSOP II package: 54‑lead 0.400" (10.16 mm) width package eases placement in space-constrained board layouts.
• 3.0–3.6 V supply flexibility: Compatible with typical 3 V supply domains used in many legacy and contemporary systems.

Why Choose IS42S83200J-6TL-TR?

The IS42S83200J-6TL-TR positions itself as a practical mid-density SDRAM option for designs that need a reliable parallel DRAM device with explicit performance and electrical parameters. Its 32M × 8 organization, 166 MHz clock rating, and compact 54‑TSOP II package make it a straightforward choice for board-level memory expansion in systems with byte-wide data paths.

This ISSI part is suitable for engineers and procurement teams specifying deterministic SDRAM timing, a defined operating temperature range, and a 3.0–3.6 V supply domain, helping support predictable integration and sourcing for production designs.

Request a quote or submit an availability inquiry to obtain pricing and lead-time information for the IS42S83200J-6TL-TR.