IS42S83200J-6TLI-TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,035 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S83200J-6TLI-TR – 256 Mbit SDRAM (32M × 8), 54‑TSOP II
The IS42S83200J-6TLI-TR is a 256 Mbit synchronous DRAM organized as 32M × 8 with a parallel memory interface. It implements SDRAM architecture with a 166 MHz clock frequency and an access time of 5.4 ns, delivering predictable synchronous performance for systems that require external volatile memory.
Packaged in a 54‑TSOP II (0.400", 10.16 mm width) package and specified for an operating ambient range of -40°C to 85°C, the device is intended for embedded designs that need mid-density parallel DRAM with a 3.0–3.6 V supply range.
Key Features
- Memory Core 256 Mbit SDRAM organized as 32M × 8, providing a straightforward byte-wide external memory interface.
- Performance Synchronous DRAM operation with a 166 MHz clock frequency and a 5.4 ns access time for predictable timed access.
- Interface Parallel memory interface suitable for systems designed around external DRAM connectivity and synchronous timing.
- Voltage Operates from a 3.0 V to 3.6 V supply range.
- Package 54‑TSOP II package (0.400", 10.16 mm width) for surface-mount mounting in space-constrained board layouts.
- Operating Temperature Specified for -40°C to 85°C ambient operating temperature (TA).
Typical Applications
- Embedded memory subsystems — Provides 256 Mbit of external SDRAM in a 32M × 8 organization for designs requiring parallel volatile memory.
- Industrial equipment — The -40°C to 85°C operating range supports deployment in temperature-variable industrial environments.
- Consumer and electronics systems — Parallel SDRAM interface and mid-density capacity fit systems needing synchronous external DRAM at 3.0–3.6 V supply levels.
Unique Advantages
- Mid-density capacity: 256 Mbit (32M × 8) balances storage density and board-level cost for many embedded designs.
- Synchronous performance: 166 MHz clock and 5.4 ns access time enable timed, predictable memory transactions.
- Standard parallel interface: Byte-wide parallel DRAM organization simplifies integration with existing parallel memory controllers.
- Wide supply tolerance: 3.0–3.6 V operating range supports systems using standard 3 V memory supply rails.
- Compact SMD package: 54‑TSOP II footprint (10.16 mm width) for compact board designs requiring surface-mount DRAM.
- Extended ambient rating: -40°C to 85°C operation for use in temperature-variable environments.
Why Choose IS42S83200J-6TLI-TR?
The IS42S83200J-6TLI-TR combines a 256 Mbit SDRAM core with synchronous timing (166 MHz clock, 5.4 ns access) and a standard parallel interface to deliver predictable external volatile memory for embedded systems. Its 54‑TSOP II package and 3.0–3.6 V supply make it suitable for compact board layouts using common 3 V rails.
This device is appropriate for designs that need a mid-density, byte-wide SDRAM with defined timing parameters and an extended ambient temperature range. Its specification set supports integration into memory subsystems where clear electrical and mechanical parameters are required.
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