IS42S83200J-6TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,035 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S83200J-6TLI-TR – 256 Mbit SDRAM (32M × 8), 54‑TSOP II

The IS42S83200J-6TLI-TR is a 256 Mbit synchronous DRAM organized as 32M × 8 with a parallel memory interface. It implements SDRAM architecture with a 166 MHz clock frequency and an access time of 5.4 ns, delivering predictable synchronous performance for systems that require external volatile memory.

Packaged in a 54‑TSOP II (0.400", 10.16 mm width) package and specified for an operating ambient range of -40°C to 85°C, the device is intended for embedded designs that need mid-density parallel DRAM with a 3.0–3.6 V supply range.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 32M × 8, providing a straightforward byte-wide external memory interface.
  • Performance Synchronous DRAM operation with a 166 MHz clock frequency and a 5.4 ns access time for predictable timed access.
  • Interface Parallel memory interface suitable for systems designed around external DRAM connectivity and synchronous timing.
  • Voltage Operates from a 3.0 V to 3.6 V supply range.
  • Package 54‑TSOP II package (0.400", 10.16 mm width) for surface-mount mounting in space-constrained board layouts.
  • Operating Temperature Specified for -40°C to 85°C ambient operating temperature (TA).

Typical Applications

  • Embedded memory subsystems — Provides 256 Mbit of external SDRAM in a 32M × 8 organization for designs requiring parallel volatile memory.
  • Industrial equipment — The -40°C to 85°C operating range supports deployment in temperature-variable industrial environments.
  • Consumer and electronics systems — Parallel SDRAM interface and mid-density capacity fit systems needing synchronous external DRAM at 3.0–3.6 V supply levels.

Unique Advantages

  • Mid-density capacity: 256 Mbit (32M × 8) balances storage density and board-level cost for many embedded designs.
  • Synchronous performance: 166 MHz clock and 5.4 ns access time enable timed, predictable memory transactions.
  • Standard parallel interface: Byte-wide parallel DRAM organization simplifies integration with existing parallel memory controllers.
  • Wide supply tolerance: 3.0–3.6 V operating range supports systems using standard 3 V memory supply rails.
  • Compact SMD package: 54‑TSOP II footprint (10.16 mm width) for compact board designs requiring surface-mount DRAM.
  • Extended ambient rating: -40°C to 85°C operation for use in temperature-variable environments.

Why Choose IS42S83200J-6TLI-TR?

The IS42S83200J-6TLI-TR combines a 256 Mbit SDRAM core with synchronous timing (166 MHz clock, 5.4 ns access) and a standard parallel interface to deliver predictable external volatile memory for embedded systems. Its 54‑TSOP II package and 3.0–3.6 V supply make it suitable for compact board layouts using common 3 V rails.

This device is appropriate for designs that need a mid-density, byte-wide SDRAM with defined timing parameters and an extended ambient temperature range. Its specification set supports integration into memory subsystems where clear electrical and mechanical parameters are required.

Request a quote or contact sales to discuss pricing, availability, and lead time for the IS42S83200J-6TLI-TR.

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