IS42S83200G-7TLI-TR

The IS42S83200G-7TLI-TR is a 256Mbit synchronous DRAM organized as 32M × 8 with internal bank architecture and pipeline operation. It provides fully synchronous, clock-referenced memory operation optimized for high-speed data transfer with a parallel LVTTL interface.

This device targets designs that require compact, clocked DRAM storage with programmable burst and timing features, delivered in a 54-pin TSOP-II package and specified for operation from -40°C to +85°C.

Key Features

• Memory Architecture  256Mbit SDRAM organized as 32M × 8 with multiple internal banks to hide row access/precharge and support pipelined operation.
• Clocked Performance  -7 speed grade provides a clock frequency up to 143 MHz and an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst & Timing  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks).
• Refresh & Power Management  Auto refresh and self-refresh supported; 8K refresh cycles with 32 ms (A2) or 64 ms (commercial/industrial/A1) refresh intervals as specified.
• Interface & Signaling  Parallel memory interface with LVTTL signaling; all inputs and outputs referenced to the rising edge of the clock.
• Supply & Voltage Range  Single-supply operation centered at 3.3 V (3.0 V to 3.6 V documented / 3.3 V ±0.3 V in datasheet).
• Package & Mounting  54-pin TSOP-II (0.400", 10.16 mm width) package for board-level mounting and compact system integration.
• Temperature Range  Specified operating ambient temperature from -40°C to +85°C.

Typical Applications

• High-speed memory subsystems  Use as synchronous DRAM storage in designs that require pipelined, clocked memory operation and predictable timing.
• Buffered data transfer  Suitable for applications requiring burst reads/writes and programmable burst sequencing to support sustained data throughput.
• Temperature-conditioned designs  Applicable where operation across -40°C to +85°C is required, leveraging the specified industrial temperature range.

Unique Advantages

• Synchronous pipeline architecture: Enables high-speed data transfer with all signals referenced to the clock rising edge for deterministic timing.
• Flexible timing and burst control: Programmable CAS latency and burst length/sequence allow tuning for system timing and throughput needs.
• Single-supply simplicity: Operates from a 3.3 V class supply (3.0–3.6 V range), simplifying power rail design.
• Compact TSOP-II footprint: 54-pin TSOP-II package provides a space-efficient option for board-level memory integration.
• Refresh and low-power modes: Auto-refresh and self-refresh support help maintain data integrity while managing refresh requirements.
• Deterministic LVTTL interface: Parallel LVTTL signaling and clock-referenced I/Os simplify timing closure in synchronous systems.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200G-7TLI-TR combines a 256Mbit synchronous DRAM organization with pipeline architecture and programmable burst/timing features to deliver predictable, clocked memory performance in a compact 54-pin TSOP-II package. Its specified access timing (5.4 ns from clock at -7 grade) and 143 MHz clock capability (CAS latency = 3) make it suitable for designs that require deterministic, high-speed parallel memory.

This device is appropriate for engineers seeking a standardized synchronous DRAM building block with flexible timing, auto/self-refresh capabilities, and a documented operating range to -40°C. The combination of supply range, LVTTL interface, and package choice supports board-level integration in systems that rely on parallel SDRAM storage.

Request a quote or contact sales to discuss availability, lead times, and volume pricing for the IS42S83200G-7TLI-TR.