IS42S83200G-7TL

The IS42S83200G-7TL is a 256 Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with internal bank architecture and pipeline operation. It is a fully synchronous, parallel-interface memory device with programmable burst and CAS settings for high-throughput, clocked data transfer.

Designed for commercial-temperature systems, the device offers a compact 54‑pin TSOP II package and supports single‑supply operation, making it suitable for board‑level memory expansion where a 256 Mbit parallel SDRAM is required.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank organization for hidden row access/precharge and pipeline architecture for high‑speed transfers.
• Memory Capacity & Organization  256 Mbit capacity organized as 32M × 8 with 4 internal banks.
• Clock & Timing  –7 speed grade with 143 MHz clock frequency and typical access time of 5.4 ns; programmable CAS latency of 2 or 3 clocks.
• Burst & Transfer Control  Programmable burst length (1, 2, 4, 8, full page) and burst sequence options (sequential or interleave); supports burst read/write and burst read/single write operations.
• Refresh  Auto Refresh and Self Refresh supported; 8K refresh cycles every 64 ms for commercial grade operation.
• Interface & Signaling  Parallel memory interface with LVTTL signalling referenced to the rising clock edge.
• Power  Single power supply operation at 3.3 V ±0.3 V (specified supply range 3.0 V to 3.6 V).
• Package & Mounting  54‑pin TSOP II (0.400", 10.16 mm width) surface‑mount package.
• Operating Temperature  Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• Board‑level SDRAM expansion  Use as parallel memory to add 256 Mbit SDRAM capacity on system PCBs requiring 32M × 8 organization.
• High‑throughput burst memory  Suitable for designs that use programmable burst lengths and CAS latency to tune read/write performance.
• Clocked, synchronous memory interfaces  For systems that rely on LVTTL, rising‑edge referenced clocking and pipeline SDRAM operation.

Unique Advantages

• Deterministic synchronous operation: Fully synchronous design with all signals referenced to the rising clock edge enables predictable timing integration.
• Flexible performance tuning: Programmable CAS latency (2 or 3) and selectable burst lengths/sequences let designers balance latency and throughput.
• Compact surface‑mount package: 54‑pin TSOP II (10.16 mm width) minimizes PCB area for memory integration.
• Single‑supply convenience: 3.3 V ±0.3 V operation (3.0–3.6 V range) simplifies power supply design.
• Built‑in refresh and low‑power standby: Auto Refresh and Self Refresh support maintain data integrity while easing system refresh management.

Why Choose IS42S83200G-7TL?

The IS42S83200G-7TL provides a compact, fully synchronous 256 Mbit SDRAM building block for commercial‑temperature designs that require predictable clocked memory behavior and configurable burst/CAS settings. Its 32M × 8 organization, internal bank architecture, and LVTTL interface make it straightforward to integrate into parallel memory buses where pipeline performance and flexible transfer modes are needed.

This device is suited to designers seeking a standardized 3.3 V parallel SDRAM in a space‑efficient 54‑pin TSOP II package, offering programmable timing and refresh options to match system performance and power requirements.

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