IS42S83200G-7TL-TR

The IS42S83200G-7TL-TR is a 256 Mbit synchronous DRAM organized as 32M × 8 with four internal banks and a parallel memory interface. It uses a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock to support high-speed data transfer.

Designed for systems requiring parallel SDRAM, this commercial-temperature (0°C to 70°C) device offers programmable burst control, selectable CAS latency, and standard 54-pin TSOP-II packaging to simplify integration into memory subsystems.

Key Features

• Memory Organization 256 Mbit SDRAM organized as 32M × 8 with four internal banks to support efficient row/column accesses and concurrent bank management.
• High‑Speed Synchronous Operation Fully synchronous SDRAM with a –7 speed grade rated for 143 MHz clock frequency and access time of 5.4 ns.
• Programmable Burst and Latency Supports programmable burst lengths (1, 2, 4, 8, full page), burst sequence (Sequential/Interleave), and CAS latency selectable between 2 and 3 clocks.
• Power Single power supply: 3.3 V ±0.3 V (3.0 V to 3.6 V supply range), suitable for standard 3.3 V memory systems.
• Interface LVTTL-compatible control interface with parallel SDRAM signaling referenced to the positive clock edge for predictable timing.
• Refresh and Self‑Refresh Supports Auto Refresh and Self Refresh modes; datasheet options include 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial/A1/industrial grades).
• Package and Mounting 54-pin TSOP-II package (0.400", 10.16 mm width) optimized for PCB-level memory implementations.
• Commercial Temperature Range Rated for ambient operation from 0°C to +70°C (TA).

Typical Applications

• Embedded Systems Used as parallel SDRAM for system memory and high-speed data buffering where synchronous access and burst transfers are required.
• Data Buffering Suitable for applications that need predictable, pipelined memory transfers and burst read/write operations for transient data storage.
• Display/Frame Buffering Applicable where parallel SDRAM is required to support sequential or interleaved burst reads for frame and pixel data handling.
• Networking and Communications Can be deployed for packet buffering and transient storage in systems that use parallel synchronous memory interfaces.

Unique Advantages

• Fully Synchronous Pipeline Architecture: All signals referenced to the rising clock edge enable deterministic timing and simplified system timing design.
• Flexible Burst Control: Programmable burst length and sequence allow designers to optimize throughput for sequential or interleaved access patterns.
• Selectable CAS Latency: CAS latency choices (2 or 3 clocks) provide trade-offs between latency and maximum clock frequency for system tuning.
• Standard 3.3 V Supply: Operates on a single 3.3 V ±0.3 V supply to align with common memory power rails and simplify power design.
• Compact TSOP-II Footprint: 54-pin TSOP-II package supports high-density board layouts while maintaining standard pinout for SDRAM designs.
• Refresh Modes: Auto and Self Refresh support extended data retention strategies and low‑activity power management per the device grade.

Why Choose IS42S83200G-7TL-TR?

The IS42S83200G-7TL-TR provides a dependable 256 Mbit synchronous DRAM option with a pipelined, banked architecture and programmable timing features to match a range of parallel memory system requirements. Its –7 speed grade (143 MHz) and 5.4 ns access timing deliver predictable performance for designs that require synchronous burst transfers and low-latency access.

This device is well suited for engineers and procurement teams specifying commercial-temperature SDRAM in a 54-pin TSOP-II package who need standard 3.3 V operation, flexible burst and latency control, and support for Auto/Self Refresh modes as documented by the manufacturer.

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