IS42S83200G-7BL-TR

The IS42S83200G-7BL-TR is a 256 Mbit synchronous DRAM organized as 32M × 8 with four internal banks and a parallel memory interface. It implements a fully synchronous, pipelined architecture and is optimized for high‑speed, clocked memory operations.

Designed for systems requiring parallel SDRAM capacity and predictable timing, the device offers programmable burst modes, selectable CAS latency, and refresh control while operating from a single 3.3 V supply in a compact 54-ball TFBGA package.

Key Features

• Memory Core — 256 Mbit DRAM organized as 32M × 8 with four internal banks for bank‑interleaving and improved throughput.
• Performance — Rated for a 143 MHz clock (‑7 speed grade) with an access time of 5.4 ns; datasheet options also list 166 MHz and 200 MHz grades.
• Interfaces & Control — Parallel memory interface with LVTTL signaling; fully synchronous operation with all signals referenced to the rising clock edge.
• Burst and Latency Options — Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks.
• Refresh and Self‑Maintenance — Supports Auto Refresh and Self Refresh; refresh options include 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade).
• Power — Single power supply: 3.3 V ±0.3 V (specified 3.0 V to 3.6 V) to simplify power sequencing and system design.
• Package & Environmental — 54‑ball TFBGA (8×8) package; commercial operating temperature 0°C to +70°C (TA) as specified for this product variant.

Typical Applications

• Parallel SDRAM subsystems — Use as an external synchronous DRAM device where 256 Mbit parallel memory is required for buffering and data storage.
• High‑speed data buffering — Suitable for designs that require burst read/write capability and predictable access timing.
• Embedded memory expansion — Fits systems needing a compact BGA memory package with standard 3.3 V power and LVTTL signaling.

Unique Advantages

• Deterministic timing: Programmable CAS latency and fully synchronous operation provide predictable access timing tied to the clock.
• Flexible burst control: Programmable burst lengths and sequence modes enable optimized transfers for a variety of data patterns.
• Simplified power design: Single 3.3 V supply (3.0–3.6 V range) minimizes power‑rail complexity.
• Compact package: 54‑ball TFBGA (8×8) reduces PCB footprint while providing a standard BGA mounting option.
• Robust refresh options: Auto and self refresh with documented 8K refresh timing options (32 ms or 64 ms) support reliable data retention strategies.

Why Choose IS42S83200G-7BL-TR?

The IS42S83200G-7BL-TR offers a straightforward, standards‑oriented synchronous DRAM solution for designs that require 256 Mbit of parallel SDRAM with programmable burst control and selectable CAS latency. Its pipelined, fully synchronous architecture and LVTTL interface deliver predictable timing for memory‑intensive tasks.

This device is well suited to engineers looking for a compact, single‑supply DRAM in a 54‑ball TFBGA package with documented timing and refresh options. The part’s combination of performance parameters and package density supports integration into systems where board space and consistent memory timing are priorities.

Request a quote or submit an inquiry for pricing and availability to evaluate IS42S83200G-7BL-TR for your design requirements.