IS42S83200G-7BLI-TR

The IS42S83200G-7BLI-TR is a 256 Mbit synchronous DRAM organized as 32M × 8 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal bank management to support high-speed data transfers at a 143 MHz clock rate.

Designed for systems that require configurable burst operation and robust refresh management, this device supports programmable CAS latency, auto/self-refresh modes and operates over an extended temperature range of -40°C to +85°C with a single 3.3 V ±0.3 V supply.

Key Features

• Memory Core — 256 Mbit SDRAM organized as 32M × 8 with 4 internal banks for bank interleaving and hidden row access/precharge.
• Performance — Rated for a 143 MHz clock (part -7), with access times down to 5.4 ns and programmable CAS latency (2 or 3 clocks) for flexible timing trade-offs.
• Burst and Sequencing — Programmable burst length (1, 2, 4, 8, full page) and selectable sequential or interleaved burst sequences to match system transfer patterns.
• Refresh and Low-Power Modes — Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles per refresh interval per device grade as specified.
• Interface — Fully synchronous LVTTL-referenced parallel interface with random column address capability every clock cycle and burst read/write support.
• Power — Single power supply: 3.3 V ±0.3 V (3.0 V–3.6 V) for straightforward system integration.
• Package and Mounting — 54-ball TFBGA (8 × 8) package, compact footprint suitable for space-constrained board designs.
• Operating Range — Specified for operation from -40°C to +85°C (TA), suitable for extended-temperature applications.

Typical Applications

• High-speed buffering and working memory — Use as system SDRAM where a 256 Mbit parallel synchronous memory is required for transient data storage and buffering.
• Embedded system memory — Configurable burst lengths and CAS latency allow tuning for embedded controller and processor memory subsystems.
• Industrial equipment — Extended operating temperature (-40°C to +85°C) and single 3.3 V supply make it suitable for industrial electronic modules requiring synchronous DRAM.

Unique Advantages

• Configurable timing and bursts — Programmable CAS latency and burst length/sequence let designers optimize throughput and latency for specific workloads.
• Pipeline architecture — Fully synchronous, pipelined design with internal banks enables continuous data flow and efficient row access/precharge hiding.
• Single-supply simplicity — 3.3 V ±0.3 V operation simplifies power supply design and voltage provisioning on the board.
• Compact BGA package — 54-ball TFBGA (8×8) reduces PCB area while delivering the necessary I/O density for parallel DRAM interfacing.
• Robust refresh support — Auto and self-refresh modes with defined refresh cycles support reliable data retention across operating conditions.

Why Choose IS42S83200G-7BLI-TR?

The IS42S83200G-7BLI-TR delivers a balanced combination of synchronous DRAM performance, configurability and industrial-temperature operation. Its 256 Mbit density, 32M × 8 organization and 143 MHz clock rating provide predictable timing and throughput for systems that require parallel SDRAM with programmable latency and burst behavior.

This device is suited for designers who need a compact, single-supply DRAM solution with flexible burst and refresh features, and who require operation across an extended temperature range for reliable field performance.

Request a quote or submit an inquiry to obtain pricing and availability for the IS42S83200G-7BLI-TR.