IS42S83200G-7BL

The IS42S83200G-7BL is a 256 Mbit synchronous DRAM organized as 32M × 8 with internal bank architecture and pipeline operation for high-speed data transfer. It implements a fully synchronous, parallel SDRAM interface with programmable burst and CAS options to support a range of read/write access patterns.

Designed for systems that require parallel SDRAM memory with compact BGA packaging and standard 3.3 V single-supply operation, the device provides selectable refresh modes and self-refresh for system-level memory management and power sequencing.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture and pipeline operation; all I/O referenced to the rising edge of the clock.
• Memory Organization  256 Mbit capacity arranged as 32M × 8 with 4 internal banks.
• Performance  Speed grade -7 supports up to 143 MHz clock frequency with 5.4 ns access time (from clock) and programmable CAS latency (2 or 3 clocks).
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination options.
• Refresh and Low-Power Modes  Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles per refresh interval (commercial/industrial A1: 64 ms; A2: 32 ms documented in datasheet).
• Interface  LVTTL-compatible signals with random column address capability every clock cycle for predictable data throughput.
• Power  Single power supply: 3.3 V ±0.3 V (3.0 V to 3.6 V operational range).
• Package and Mounting  54-ball TFBGA (8 × 8) package for compact board-level integration; supplier device package listed as 54-TFBGA (8×8).
• Operating Temperature  Commercial grade operating range 0°C to +70°C (TA).

Typical Applications

• Parallel memory subsystems  Use where a 256 Mbit synchronous parallel DRAM is required for high-throughput buffering and temporary storage.
• Embedded systems  Suitable for embedded designs that require synchronous DRAM with selectable burst behavior and self-refresh capability.
• Board-level memory expansion  Compact 54-TFBGA package enables dense board layouts that need a 3.3 V single-supply SDRAM solution.

Unique Advantages

• High-speed synchronous operation: Pipeline architecture with a 143 MHz clock option and 5.4 ns access time from clock delivers deterministic timing for synchronous designs.
• Flexible data access: Programmable burst lengths and selectable sequential/interleave burst sequences allow tailored memory access patterns to match system needs.
• Standard single-supply power: Operates from a 3.3 V single supply (3.0 V to 3.6 V), simplifying power-rail design.
• Refresh and retention modes: Auto Refresh and Self Refresh support reduce system refresh management overhead and help with low-power retention.
• Compact BGA packaging: 54-ball TFBGA (8×8) package provides a small footprint for dense board integration.
• Predictable timing controls: Programmable CAS latency (2 or 3) and LVTTL signaling give designers control over timing and interface compatibility.

Why Choose IS42S83200G-7BL?

The IS42S83200G-7BL offers a combination of synchronous, high-throughput SDRAM architecture and flexible access features suitable for designs requiring compact, parallel memory. Its 32M × 8 organization, programmable burst behavior, and supported refresh modes provide designers with deterministic timing and memory management options for a variety of system-level buffering and temporary storage needs.

With a standard 3.3 V supply, LVTTL signaling, and a 54-TFBGA package, this device is positioned for board-level memory expansion where size, synchronous operation, and selectable timing parameters are important. The documented operating range and refresh options support integration into commercial-grade designs.

Request a quote or submit an inquiry to receive pricing and availability for IS42S83200G-7BL and to discuss part integration and delivery options.