IS42S83200G-6TLI

The IS42S83200G-6TLI is a 256Mbit synchronous DRAM organized as 32M × 8 with a parallel SDRAM interface. It implements a pipelined, fully synchronous architecture with clock-referenced inputs and outputs for predictable timing in system memory applications.

Designed for systems that require programmable burst access, selectable CAS latency and industrial temperature operation (–40°C to +85°C TA), this device targets applications needing deterministic, refresh-managed volatile memory with a compact 54‑pin TSOP II package.

Key Features

• Memory Core  256 Mbit SDRAM organized as 32M × 8 with internal banks to hide row access and precharge.
• Synchronous Operation  Fully synchronous design with all signals referenced to the rising clock edge and a pipeline architecture.
• Clock and Timing  Supports a clock frequency option of 166 MHz and programmable CAS latency (2 or 3 clocks); access time from clock of approximately 5.4 ns.
• Burst and Access Modes  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); burst read/write and burst read/single write supported with burst termination commands.
• Refresh and Power  Auto Refresh and Self Refresh supported; refresh count options of 8K cycles per 32 ms (A2) or 64 ms (commercial/industrial/A1). Single supply operation at 3.0 V to 3.6 V.
• Interface  Parallel SDRAM interface with LVTTL signaling.
• Package and Temperature  54‑pin TSOP II (0.400", 10.16 mm width) package; specified operating temperature range −40°C to +85°C (TA).

Typical Applications

• Industrial memory subsystems  Use in systems requiring DRAM operation across −40°C to +85°C where deterministic, synchronous refresh and burst access are needed.
• Parallel SDRAM buffering  Parallel interface and programmable burst features make it suitable for buffering data in systems with parallel SDRAM controllers.
• Burst-oriented data buffering  Programmable burst lengths and CAS latencies support applications that rely on burst transfers and predictable read/write timing.

Unique Advantages

• Flexible timing control: Programmable CAS latency (2 or 3) and multiple burst length/sequence options let designers match memory timing to system requirements.
• Deterministic synchronous interface: All signals referenced to the rising clock edge for consistent, pipeline-oriented operation.
• Industrial temperature option: Specified operation from −40°C to +85°C supports deployment in temperature-critical environments.
• Compact board footprint: 54‑pin TSOP II package (10.16 mm width) provides a space-efficient form factor for high-density designs.
• Integrated refresh support: Auto Refresh and Self Refresh with defined refresh cycle options simplify system refresh management.
• Standard supply range: Operates from 3.0 V to 3.6 V, compatible with typical 3.3 V SDRAM power rails.

Why Choose IS42S83200G-6TLI?

The IS42S83200G-6TLI provides a compact, industrial-temperature-capable 256Mbit SDRAM solution with configurable burst and latency options suitable for systems that require predictable, synchronous memory behavior. Its parallel SDRAM interface, LVTTL signaling, and integrated refresh modes make it appropriate for designs where deterministic timing and managed refresh are required.

This device is positioned for engineers designing memory subsystems that need a balance of timing flexibility, package density and industrial temperature operation, backed by manufacturer datasheet specifications for integration and verification.

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