IS42S83200G-6TL-TR

The IS42S83200G-6TL-TR is a 256 Mbit synchronous DRAM organized as 32M × 8 with four internal banks, supplied in a 54‑pin TSOP II package. It implements a fully synchronous pipeline architecture with all signals referenced to the rising clock edge.

Designed for systems that require parallel SDRAM with predictable latency and high-speed burst transfers, this device delivers 166 MHz operation (–6 grade), programmable burst control and built‑in refresh/self‑refresh capabilities to support continuous, high-rate memory access patterns.

Key Features

• Core & Architecture Fully synchronous design with internal bank structure to hide row access/precharge; all inputs and outputs are referenced to the positive clock edge.
• Memory Organization 256 Mbit capacity arranged as 32M × 8 with 4 banks for parallel DRAM operation.
• Performance –6 speed grade supports 166 MHz clock frequency with an access time of 5.4 ns (CAS latency options 2 or 3).
• Burst Control Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Retention Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles specified for commercial and A1 grades at 64 ms and A2 grade at 32 ms.
• Interface & Logic Parallel memory interface with LVTTL signaling for control and data lines.
• Power Single power supply: 3.3 V ±0.3 V (3.0–3.6 V).
• Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width); commercial operating temperature range 0°C to 70°C (TA).

Typical Applications

• Parallel system memory — Use as 256 Mbit synchronous DRAM in designs that require a parallel SDRAM interface with predictable CAS latency and burst capability.
• High‑speed buffering — Suitable where pipeline architecture and programmable burst sequences support sustained read/write bursts and reduced latency.
• Embedded and commercial electronics — Fits commercial‑grade embedded systems operating within 0°C to 70°C that require a compact 54‑pin TSOP II memory solution.

Unique Advantages

• Deterministic low‑latency access: 166 MHz operation with 5.4 ns access time (–6 grade) and programmable CAS latency (2 or 3 clocks) for time‑sensitive memory cycles.
• Flexible burst and sequencing: Multiple burst lengths and sequential/interleave modes enable optimized transfers for both short and long data bursts.
• Built‑in refresh management: Auto Refresh and Self Refresh modes with defined 8K refresh cycles provide retention control across operating conditions.
• Wide supply tolerance: Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), aligning with standard 3.3 V system rails.
• Compact industry footprint: 54‑pin TSOP II (0.400" / 10.16 mm width) enables space‑efficient board integration.

Why Choose IS42S83200G-6TL-TR?

The IS42S83200G-6TL-TR provides a compact, fully synchronous 256 Mbit SDRAM option for designers who need predictable latency, flexible burst control and standard 3.3 V operation. Its 32M × 8 organization with internal bank architecture supports efficient row/column access patterns and high‑rate burst transfers.

This device is well suited to commercial embedded and system-level designs that require a parallel SDRAM footprint in a 54‑pin TSOP II package, offering straightforward integration and supported refresh/self‑refresh mechanisms for continuous operation.

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